LiNbO3 waferka isku xidhka

Sharaxaad Gaaban:

Lithium niobate crystal waxay leedahay koronto-optical, acousto-optical, piezoelectric, iyo sifooyin aan toos ahayn oo heersare ah. Lithium niobate crystal waa crystal multifunctional muhiim ah oo leh sifooyin muuqaal ah oo wanaagsan oo aan toos ahayn iyo iskudhaf weyn oo aan toos ahayn; Waxa kale oo ay gaadhi kartaa isbarbardhigga wejiga aan muhiimka ahayn. Sida crystal-optical crystal, waxa loo isticmaalay sidii qalab waveguide indhaha oo muhiim ah; sida crystal piezoelectric ah, waxa loo isticmaali karaa in la sameeyo dhexdhexaad ah iyo inta jeer ee hooseeya SAW filtarrada, awood sare-kulka sare u adkaysta transducers ultrasonic, iwm. Qalabka lithium niobate doped ayaa sidoo kale si ballaaran loo isticmaalaa.

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Semicera's LiNbO3 Bonding Wafer waxaa loogu talagalay in lagu daboolo baahiyaha sare ee wax soo saarka semiconductor sare. Iyada oo leh sifooyinkeeda gaarka ah, oo ay ku jiraan iska caabbinta xidhashada sare, xasilloonida kulaylka sare, iyo nadiifnimada heersare ah, waferkan ayaa ku habboon in loo isticmaalo codsiyada u baahan saxnaanta iyo waxqabadka muddada dheer.

Warshadaha semiconductor-ka, LiNbO3 Bonding Wafers waxaa badanaa loo isticmaalaa isku xidhka lakabyada khafiifka ah ee aaladaha indhaha, dareemayaasha, iyo IC-yada horumarsan. Waxaa si gaar ah loogu qiimeeyaa sawir-qaadista iyo MEMS (Nidaamka Micro-Electromechanical Systems) taas oo ay ugu wacan tahay sifooyinkooda korontada ku shaqeeya ee aadka u wanaagsan iyo awoodda ay u adkeysan karaan xaaladaha adag ee shaqada. Semicera's LiNbO3 Bonding Wafer waxaa loo habeeyey si ay u taageerto isku xidhka lakabka saxda ah, iyada oo kor u qaadeysa waxqabadka guud iyo isku halaynta aaladaha semiconductor.

Qalabka kulaylka iyo korantada ee LiNbO3
barta dhalaalaysa	1250 ℃
Heerkulka Curie	1140 ℃
Dhaqdhaqaaqa kulaylka	38 W/m/K @ 25 ℃
Isku-dubbaridka ballaadhinta kulaylka (@25°C)	//a,2.0×10^-6/K //c,2.2×10^-6/K
iska caabin	2×10^-6Ω·cm @ 200 ℃
Dielectric joogto ah	εS11/ε0=43，εT11/ε0=78 εS33/ε0=28，εT33/ε0= 2
Piezoelectric joogto ah	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Iskuxidhka elektro-optic	γT₃₃=32 galabnimo/V, γS₃₃=31 galabnimo/V γT₃₁=10 galabnimo/V, γS₃₁=8.6 galabnimo/V γT₂₂=6.8 pm/V, γS₂₂=3.4 galabnimo/V
Korontada badh-mawjada, DC Goobta korantada // z, iftiinka ⊥ Z; Goobta korantada // x ama y, iftiin ⊥ z	3.03 KV 4.02 KV

Lagu farsameeyay iyada oo la isticmaalayo agab tayo sare leh, LiNbO3 Waferka Isku xidhka ayaa hubiya isku halaynta joogtada ah xitaa marka lagu jiro xaalado aad u daran. Degganaansha kulaylka sare waxay ka dhigaysaa mid si gaar ah ugu habboon bay'adaha ku lug leh heerkulka sare, sida kuwa laga helo hababka epitaxy-ga ee semiconductor. Intaa waxaa dheer, nadiifinta sare ee waferku waxay hubisaa faddaraynta ugu yar, taasoo ka dhigaysa doorasho la aamini karo ee codsiyada semiconductor ee muhiimka ah.

Semicera, waxaa naga go'an inaan bixino xalalka hogaaminaya warshadaha. Waferkeena LiNbO3 Bonding Wafer waxa ay keentaa adkeysiga aan la isbarbar dhigi karin iyo kartida waxqabadka sare leh ee codsiyada u baahan nadiifnimo sare, xirashada caabbinta, iyo xasiloonida kulaylka. Hadday tahay wax-soo-saarka semiconductor-ka horumarsan ama tignoolajiyada kale ee gaarka ah, waferkan wuxuu u adeegaa sidii qayb lagama maarmaan u ah soo saarista aaladda gees-goynta.