InP iyo CdTe Substrate

Sharaxaad Gaaban:

Semicera's InP iyo CdTe xalalka Substrate waxaa loogu talagalay codsiyada waxqabadka sare leh ee semiconductor iyo warshadaha tamarta qorraxda. Substrate-yadayada InP (Indium Phosphide) iyo CdTe (Cadmium Telluride) waxay bixiyaan sifooyin aan caadi ahayn, oo ay ku jiraan hufnaan sare, koronto heer sare ah, iyo xasillooni kuleyl oo adag. Substrate-yadani waxay ku habboon yihiin in loo isticmaalo aaladaha horumarsan ee optoelectronic, transistor-ka-soo noqnoqda sare, iyo unugyada qoraxda-filimka ah, iyagoo siinaya aasaas lagu kalsoonaan karo oo loogu talagalay teknoolojiyadda cirifka ah.


Faahfaahinta Alaabta

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oo leh Semicera'sInP iyo CdTe Substrate, waxaad filan kartaa tayada sare iyo saxnaanta injineernimada si loo daboolo baahiyaha gaarka ah ee hababkaaga wax soo saarka. Haddi ay ahaan lahayd codsiyada voltaic-ka ama aaladaha semiconductor, substrate-yadayada waxa loo sameeyay si loo hubiyo waxqabadka ugu fiican, adkeysiga, iyo joogtaynta. Sida alaab-qeybiye la aamini karo, Semicera waxaa ka go'an inay soo saarto tayo sare leh, xalal substrate ah oo la beddeli karo oo horseeda hal-abuurnimada qaybaha tamarta la cusboonaysiin karo.

Crystalline iyo Guryaha Korontada1

Nooca
Dopant
EPD (cm–2) (Hoos ka eeg A.)
DF (cilad bilaash ah) aagga (cm2Hoos ka eeg B.)
c/ (c cm–3)
Mobilit (y cm2/Vs)
Resistivit (y Ω・cm)
n
Sn
≦5×104
≦1×104
≦5×103
──────
 

(0.5〜6)×1018
──────
──────
n
S
──────
≧ 10 (59.4%)
≧ 15 (87%).4
(2-10)×1018
──────
──────
p
Zn
──────
≧ 10 (59.4%)
≧ 15 (87%)
(3,6)×1018
──────
──────
SI
Fe
≦5×104
≦1×104
──────
──────
──────
≧ 1×106
n
midna
≦5×104
──────
≦1×1016
≧ 4×103
──────
1 Tilmaamo kale ayaa la heli karaa marka la codsado.

A.13 Dhibcaha Celceliska

1. Cufnaanta godad-ka-baxa etch waxaa lagu cabbiraa 13 dhibcood.

2. Celceliska miisaanka aagga ee cufnaanta kala-baxa waa la xisaabiyaa.

Cabbirka Aagga B.DF (Haddii ay dhacdo dammaanad-qaadka aagga)

1. Cufnaanta godka etch ee 69 dhibcood ee lagu muujiyay midig ayaa la tiriyaa.

2. DF waxa lagu qeexaa EPD in ka yar 500cm–2
3. Meesha ugu badan ee DF ee habkan lagu cabbiray waa 17.25cm2
InP iyo CdTe Substrate (2)
InP iyo CdTe Substrate (1)
InP iyo CdTe Substrate (3)

InP Single Crystal Substrates Tilmaamaha Guud

1. Hanuuninta
Jihaynta dusha sare (100) ± 0.2º ama (100) ± 0.05º
Jihaynta dusha sare waa la heli karaa marka la codsado.
Hanuuninta guriga: (011)±1º ama (011)±0.1º HADDII: (011)±2º
La fasaxay waxa la heli karaa marka la codsado.
2. Calaamadaynta Laser ee ku salaysan heerka SEMI waa la heli karaa.
3. Baakad shakhsi ah, iyo sidoo kale xirmo ku jira gaaska N2 ayaa diyaar ah.
4. Etch-iyo-xirmo ku jira gaaska N2 waa la heli karaa.
5. Wafers afargees ah ayaa diyaar ah.
Faahfaahinta sare waa heerka JX'
Haddii faahfaahin kale loo baahan yahay, fadlan na weydii.

Hanuuninta

 

InP iyo CdTe Substrate (4)(1)
Goobta shaqada ee Semicera
Goobta shaqada ee Semicera 2
Mashiinka qalabka
Habaynta CNN, nadiifinta kiimikada, daahan CVD
Semicera Ware House
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