Silicon Carbide SiC Dahaarka Epitaxial Reactor Foosto

Silicon Carbide SiC Dahaarka Epitaxial Reactor Foostada Sawirka leh

Sharaxaad Gaaban:

Semicera waxay soo bandhigtaa kala duwanaansho dhammaystiran oo ah kuwa wax-is-dabo-gelis ah iyo qaybaha graphite ee loogu talagalay reactors epitaxy kala duwan.

Iyada oo loo marayo iskaashi istaraatiijiyadeed oo lala yeesho OEM-yada hormuudka u ah warshadaha, khibradda agabka ballaaran, iyo awoodaha wax soo saarka ee horumarsan, Semicera waxay soo bandhigtaa naqshado loo habeeyey si ay u buuxiso shuruudaha gaarka ah ee codsigaaga. Ballanqaadkayaga xagga sareynta waxay hubinaysaa inaad hesho xalalka ugu habboon baahiyahaaga fal-celinta epitaxy.

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Shirkaddayadu waxay bixisaaDahaarka SiCadeegyada habka dusha sare ee graphite, ceramics iyo qalabka kale ee habka CVD, si gaasas gaar ah oo ay ku jiraan kaarboon iyo Silicon falcelin karaan heerkulka sare si ay u helaan-nadiifinta sare Sic molecules, kaas oo lagu shubo karaa on dusha alaabta dahaarka ah si ay u sameeyaan aLakabka ilaalinta SiCfoosto epitaxy nooca hy pnotic.

Tilmaamaha ugu muhiimsan:

1. Nadiifinta sare ee SiC garaafyada dahaarka leh

2. Iska caabbinta kulaylka sare iyo isku midnimada kulaylka

3. FiicanSiC crystal dahaarka lehdusha siman

4. Adkeysiga sare ee nadiifinta kiimikada

Tilmaamaha ugu muhiimsan eeDaboolka CVD-SIC

Guryaha SiC-CVD
Dhismaha Crystal	FCC β wejiga
Cufnaanta	g/cm³	3.21
Adag	adkaanta Vickers	2500
Cabirka Hadhuudhka	μm	2 ~ 10
Nadiifnimada Kiimikada	%	99.99995
Awoodda kulaylka	J·k-1 ·K-1	640
Heerkulka Sublimation	℃	2700
Xoogga Felexural	MPa (RT 4-dhibcood)	415
Dhallinta Modul	Gpa (4pt laab, 1300 ℃)	430
Balaadhinta kulaylka (CTE)	10-6K-1	4.5
Dhaqdhaqaaqa kulaylka	(W/mK)	300