Semicera waxay siisaa dahaarka tantalum carbide (TaC) ee khaaska ah ee qaybo kala duwan iyo sidayaal.Nidaamka dahaadhka hogaaminaya ee Semicera wuxuu awood u siinayaa dahaarka tantalum carbide (TaC) si loo gaaro nadiif sare, xasilooni heerkul sare ah iyo dulqaad kiimiko sare leh, hagaajinta tayada badeecada ee kiristaalo SIC/GAN iyo lakabyada EPISusceptor TaC dahaarka graphite), iyo kordhinta nolosha qaybaha muhiimka ah ee reactor. Isticmaalka daahan tantalum carbide TaC waa in la xaliyo dhibaatada cirifka iyo hagaajinta tayada kobaca crystal, iyo Semicera ayaa horumar ah xalliyo technology daahan carbide tantalum carbide (CVD), gaarey heerka sare ee caalamiga ah.
Sannado badan oo horumarineed ka dib, Semicera waxay ku guulaysatay tiknoolajiyadaCVD TaCiyadoo dadaalka wadajirka ah ee waaxda R&D. Cilladaha way fududahay in ay ku dhacaan habka koritaanka SiC wafers, laakiin ka dib marka la isticmaaloTaC, farqigu waa mid muhiim ah. Hoos waxaa ku yaal isbarbardhigga waferrada leh iyo la'aanta TaC, iyo sidoo kale qaybaha Semicera' ee korriinka hal crystal
leh iyo la'aanteed TaC
Kadib isticmaal TaC (midig)
Intaa waxaa dheer, nolosha adeegga ee alaabta daahan Semicera ee TaC waa ka dheer oo adkaysi u heerkulka sare ka SiC. Ka dib wakhti dheer oo xogta cabbiraadda shaybaadhka, TaC-gayagu waxa ay shaqayn kartaa wakhti dheer ugu badnaan 2300 darajo Celsius. Kuwa soo socda waa qaar ka mid ah muunadyadayada:
(a) Jaantuska jaantuska ee SiC-ga hal-abuurka ingot ee koraya ee PVT habka
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