Silikon carbide (SiC)ayaa si degdeg ah u noqonaysa doorashada silikoon ee qaybaha elektaroonigga ah, gaar ahaan codsiyada bandgap ballaaran. SiC waxay bixisaa hufnaanta korantada oo la xoojiyey, cabbirka is haysta, miisaanka oo yaraada, iyo hoos u dhaca kharashyada nidaamka guud.
Baahida loo qabo budada SiC ee nadiifka ah ee elektiroonigga ah iyo warshadaha semiconductor ayaa u horseeday Semicera si ay u horumariso nadiif sare oo sarebudada SiC. Habka hal-abuurka leh ee Semicera ee soo saarista nadiifnimada sare ee SiC natiijooyinka budada kuwaas oo muujiya isbeddellada qaab-dhismeedka qaab-dhismeedka, isticmaalka maaddada oo gaabis ah, iyo is-dhexgalyada koritaanka xasilloon ee qaabaynta koritaanka crystal.
Budadayada SiC ee nadiifka ah ayaa lagu heli karaa qiyaaso kala duwan waxaana loo habeyn karaa si loo buuxiyo shuruudaha macaamiisha gaarka ah. Faahfaahin dheeraad ah iyo si aad uga hadasho mashruucaaga, fadlan la xiriir Semicera.