Qaadaha SiC daahirnimo Sare

Sidiyaha SiC daahirnimo Sare/Sawirka Sifada leh

Sharaxaad Gaaban:

Saxanka silikoon carbide waxa kale oo loo yaqaan SIC tray, silicon carbide etching disc, ICP etching disc. Silikon carbide saxaarad loogu talagalay etching LED (SiC tray) φ600mm waa qalab gaar ah oo loogu talagalay etching qoto dheer ee silikoon (mashiinka etching ICP).

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Sharaxaada

Ceramics-ka Silicon carbide waxay leeyihiin sifooyin farsamo oo heer sare ah oo heerkulka qolka ah, sida xoog sare, qallafsanaan sare, modules laastikada sare, iwm. waxqabadka processing.
Waxay si gaar ah ugu habboon yihiin inay soo saaraan qaybo dhoobo ah oo sax ah oo loogu talagalay qalabka wareegga isku dhafan sida mashiinnada lithography, oo inta badan loo isticmaalo soo saarista SiC side / susceptor, SiC wafer doon, dhuuqida saxanka biyaha qaboojinta, cabbirka saxda ah ee cabbiraadda, shabageynta iyo qaybaha kale ee dhismaha dhoobada

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Faa'iidooyinka

Iska caabin heerkul sarreeya: isticmaalka caadiga ah ee 1800 ℃
Dhaqdhaqaaqa kulaylka sare: oo u dhiganta walxaha garaafka
Adayg sare: engegnaanshiyaha labaad oo keliya dheeman, boron nitride
Iska caabbinta daxalka: aashitada xooggan iyo alkali ma laha wax daxal ah, iska caabbinta daxalka ayaa ka fiican carbide tungsten iyo alumina
Miisaanka fudud: cufnaanta hoose, u dhow aluminium
Wax qallafsanaan lahayn: isku-dhafan hooseeya ee ballaarinta kulaylka
Iska caabbinta shoogga kulaylka: waxay u adkeysan kartaa isbeddellada heerkulka fiiqan, waxay iska caabin kartaa shoogga kulaylka, waxayna leedahay waxqabad deggan
Silicon carbide carrier sida sic etching carrier, ICP etching susceptor, waxaa si weyn loo isticmaalaa in semiconductor CVD, vacuum sputtering iwm Waxaan siin karnaa macaamiisha la sidaha wafer gaar ah silikon iyo silikon carbide alaabta si ay ula kulmaan codsiyada kala duwan.

Faa'iidooyinka

Hanti	Qiimaha	Habka
Cufnaanta	3.21 g/cc	Quus-sabeen iyo cabbir
Kuleyl gaar ah	0.66 J/g °K	Fiishka laysarka la garaaco
Xoog dabacsanaan	450 MPa560 MPa	4-dhibcood laablaab, 1300 °
adkaanta jabka	2.94 MPa m1/2	Microindentation
Adag	2800	Vicker's, 500 g oo culeys ah
Modulus Elastic ModulusYoung's Modulus	450 GPa430 GPA	4 pt qaloocsan, RT4 pt laab, 1300 °C
Cabbirka hadhuudhka	2 - 10 µm	SEM

Xogta Shirkadda

WeiTai Energy Technology Co., Ltd. waa alaab-qeybiyaha ugu horreeya ee ceramics semiconductor horumarsan iyo soo saaraha kaliya ee Shiinaha oo isku mar siin kara dhoobada silikoon carbide ee nadiifka ah (gaar ahaan SiC Recrystallized) iyo CVD SiC daahan. Intaa waxaa dheer, shirkadeena waxay sidoo kale ka go'an tahay beeraha dhoobada sida alumina, aluminium nitride, zirconia, iyo nitride silicon, iwm.

Alaabadayada ugu muhiimsan oo ay ku jiraan: silikoon carbide etching disc, silikoon carbide tow, doon wafer silicon carbide (Photovoltaic & Semiconductor), tuubada foornada silikoon carbide, silikoon carbide cantilever paddle, chucks silicon carbide chucks, silicon carbide beam, iyo sidoo kale daboolka CVD SiC iyo TaC daahan. Alaabooyinka inta badan loo isticmaalo warshadaha semiconductor iyo photovoltaic, sida qalabka koritaanka crystal, epitaxy, etching, baakadaha, dahaarka iyo foornooyinka faafinta, iwm.
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