Sharaxaada
Susceptor Graphite oo lehDahaarka Silicon Carbide, 6 xabbo6 inch wafer Carrierlaga bilaabo semicera waxay bixisaa adkeysi aan caadi ahayn iyo kuleyl kuleyl oo loogu talagalay codsiyada korriinka epitaxial ee waxqabadka sarreeya. Semicera waxay ku takhasustay shakiyeyaasha horumarsan ee loogu talagalay in lagu wanaajiyo hababka sidaSida EpitaxyiyoSiC Epitaxy, hubinta waxqabadka la isku halayn karo ee baahida loo qabo deegaan semiconductor.
Susceptor-kan waxaa si gaar ah loogu farsameeyay in lagu isticmaaloSusceptor MOCVDNidaamyada waxayna bixisaa laqabsiga sidayaal kala duwan sida PSS Etching Carrier, ICP Etching Carrier, iyo Qaadaha RTP. Waxay ku habboon tahay soosaarka Monocrystalline Silicon iyo dejinta Epitaxial Susceptor LED, oo bixisa wax-qabadyo qaabab kala duwan, oo ay ku jiraan naqshadaha Susceptor Barrel iyo Pancake Susceptor.
Susceptor-ka 'Graphite Susceptor' oo leh Silicon Carbide Coating wuxuu kaloo taageeraa codsiyada qaybta tamarta qoraxda iyada oo la dhexgelinayo Qaybaha Photovoltaic oo aad ugu sarreeya GaN ee hababka SiC Epitaxy. Awoodeeda wafer ee 6-inji ah waxay hubisaa soo saarista sare, taasoo ka dhigaysa qalab lagama maarmaan u ah soosaarayaasha semiconductor iyo warshadaha sawir-qaadista.
Tilmaamaha ugu muhiimsan
1. Nadiifinta sare ee SiC garaafyada dahaarka leh
2. Iska caabbinta kulaylka sare iyo isku midnimada kulaylka
3. FiicanSiC crystal dahaarka lehdusha siman
4. Adkeysiga sare ee nadiifinta kiimikada
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC:
SiC-CVD | ||
Cufnaanta | (g/cc) | 3.21 |
Xoog dabacsanaan | (Mpa) | 470 |
Balaadhinta kulaylka | (10-6/K) | 4 |
Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
Baakad iyo rarid
Awooda wax bixinta:
10000 Qaybaha/Qeybaha bishii
Baakadaha & Bixinta:
Xirxirida:Standard & Xidhid Xoog Leh
Shandad badan + Sanduuqa + Kartoon + Sariiraha
Dekedda:
Ningbo/Shenzhen/Shanghai
Waqtiga Hogaaminta:
Tirada (Qeybaha) | 1-1000 | >1000 |
Est. Waqti (maalmo) | 30 | In laga wadahadlo |