GaN Epitaxy

Sharaxaad Gaaban:

GaN Epitaxy waa udub dhexaadka u ah soosaarka aaladaha wax-qabadka sare leh ee semiconductor, oo bixiya hufnaan gaar ah, xasilloonida kulaylka, iyo isku halaynta. Semicera's GaN Epitaxy xalalka waxaa loo habeeyey si ay u daboolaan baahida codsiyada gees-goynta, hubinta tayada sare iyo joogtaynta lakab kasta.


Faahfaahinta Alaabta

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Semicerasi sharaf leh u soo bandhigaysa goynteedaGaN Epitaxyadeegyada, loogu talagalay in lagu daboolo baahiyaha weligood soo koraya ee warshadaha semiconductor. Gallium nitride (GaN) waa shay caan ku ah sifooyinkeeda gaarka ah, iyo hababka kobaca epitaxial-kayaga ayaa hubinaya in faa'iidooyinkan si buuxda loogaga dhabaynayo aaladahaaga.

Lakabyada GaN Waxqabadka Sare Semiceraku takhasusay soo saarista tayo sare lehGaN Epitaxylakabyo, oo bixiya daahirnimo shay aan la mid ahayn iyo hufnaanta qaabdhismeedka. Lakabyadani waxay muhiim u yihiin codsiyo kala duwan, laga bilaabo korantada elektiroonigga ah ilaa optoelectronics, halkaasoo waxqabadka sare iyo kalsoonida ay lagama maarmaan tahay. Farsamooyinkeena saxda ah ee korriinka waxay xaqiijinayaan in lakab kasta oo GaN ah uu buuxiyo heerarka saxda ah ee looga baahan yahay qalabka goynta.

La hagaajiyay waxtarkaTheGaN Epitaxyay bixiso Semicera waxaa si gaar ah loo farsameeyay si kor loogu qaado waxtarka qaybahaaga elegtarooniga ah. Bixinta cillad hoose, lakabyo nadiif ah oo GaN ah, waxaan awood u siineynaa aaladaha inay ku shaqeeyaan xawli sare iyo koronto, iyadoo korontadu ay yaraatay. Hagaajintani waxay fure u tahay codsiyada sida transistor-ka-dhaqdhaqaaqa sare ee elektiroonigga ah (HEMTs) iyo diode-yada iftiinka-bixiya (LEDs), halkaasoo hufnaantu ay muhiim tahay.

Codsiga Kala Duwan ee suurtogalka ah SemicerasGaN Epitaxywaa wax badan, oo u adeegta warshado iyo codsiyo kala duwan. Haddii aad horumarinayso cod-weyneeyeyaal koronto, qaybaha RF, ama diodes-ka laysarka, lakabyadayada GaN epitaxial waxay bixiyaan aasaaska loo baahan yahay wax-qabad sare, qalab la isku halayn karo. Nidaamkeena waxaa loo qaabeyn karaa si uu u buuxiyo shuruudo gaar ah, iyadoo la hubinayo in alaabtaadu ay gaaraan natiijooyin wanaagsan.

Ballanqaadka tayadaTayadu waa tiirka u ahSemicerahabka loo wajahoGaN Epitaxy. Waxaan isticmaalnaa tignoolajiyada koritaanka epitaxial ee horumarsan iyo tillaabooyinka xakamaynta tayada adag si aan u soo saarno lakabyada GaN oo muujiya isku midnimo heer sare ah, cufnaanta cilladaha hooseeya, iyo sifooyinka agabka sare. Ballan-qaadkan tayada ayaa hubinaya in aaladahaagu aanay buuxin oo keliya balse ay ka sarreeyaan heerarka warshadaha.

Farsamooyinka Kobaca Hal-abuurka leh Semicerawaa safka hore ee hal-abuurnimada berrinkiiGaN Epitaxy. Kooxdayadu waxay si joogto ah u sahamisaa habab cusub iyo teknooloji si loo hagaajiyo habka kobaca, bixinta lakabyada GaN oo leh sifooyin koronto iyo kulayl la xoojiyey. Hal-abuurradan waxay u tarjumaan aaladaha si wanaagsan u shaqeeya, oo awood u leh inay buuxiyaan shuruudaha codsiyada jiilka soo socda.

Xalka la Habeeyay ee MashaariicdaadaIyadoo la aqoonsanayo in mashruuc kastaa leeyahay shuruudo gaar ah.Semicerawaxay bixisaa habaysanGaN Epitaxyxalalka. Haddii aad u baahan tahay muuqaalada doping-ka gaarka ah, dhumucda lakabka, ama dhamaystirka dusha sare, waxaanu si dhow kula shaqaynaynaa si aanu u horumarino hanaan buuxinaya baahiyahaaga saxda ah. Hadafkayagu waa inaan ku siino lakabyo GaN oo si sax ah loo farsameeyay si ay u taageeraan waxqabadka iyo isku halaynta qalabkaaga.

Walxaha

Wax soo saar

Cilmi baaris

nacasnimo

Qiyaasta Crystal

Noocyo badan

4H

Khaladka jihaynta dusha sare

<11-20>4±0.15°

Qiyaasta Korontada

Dopant

n-nooca Nitrogen

iska caabin

0.015-0.025ohm · cm

Halbeegyada Makaanikada

Dhexroorka

150.0 ± 0.2mm

Dhumucda

350± 25 μm

Hanuuninta fidsan ee aasaasiga ah

[1-100]±5°

Dhererka siman ee aasaasiga ah

47.5 ± 1.5mm

Dabaqa labaad

Midna

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Qaansada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Wajiga hore (Si-wejiga) qallafsanaanta (AFM)

Ra≤0.2nm (5μm*5μm)

Qaab dhismeedka

Cufnaanta tuubbada yar

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Wasakhda birta

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tayada hore

Hore

Si

Dhammaadka dusha sare

Si-wejiga CMP

Qaybaha

≤60ea/wafer (xajmiga≥0.3μm)

NA

xoqid

≤5ea/mm Dhererka isugeynta ≤ Dhexroorka

Dhererka isugeynta≤2* Dhexroor

NA

Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga

Midna

NA

Chips-ka-geeska/indents/jabka/taargada hex

Midna

Aagagga nooca badan

Midna

Aagga isugeynta≤20%

Aagga isugeynta≤30%

Calaamadaynta laysarka hore

Midna

Tayada dambe

Dhammaadka dhabarka

C-waji CMP

xoqid

≤5ea/mm, Dhererka isugeynta≤2* Dhexroor

NA

Cilladaha dhabarka (dhab-jeexyada geesaha)

Midna

Dhabar xumada

Ra≤0.2nm (5μm*5μm)

Calaamadaynta laser-ka dambe

1 mm (laga bilaabo cidhifka sare)

Cidhif

Cidhif

Chamfer

Baakadaha

Baakadaha

Epi-diyaar ah oo leh baakad vacuum ah

Baakadaha cajaladaha wafer-ka badan

* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD.

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