Semicera wuxuu ku faanaa inuu soo bandhigoGa2O3Substrate, walxo heersare ah oo diyaar u ah inay wax ka beddelaan korantada elektiroonigga ah iyo optoelectronics.Gallium oxide (Ga2O3) substrateswaxaa lagu yaqaanaa garaafkooda aadka u ballaaran, taasoo ka dhigaysa inay ku habboon yihiin aaladaha awoodda sare iyo kuwa soo noqnoqonaya.
Astaamaha Muhiimka ah:
Bandgap aadka u ballaadhan: Ga2O3 waxay bixisaa bandgap ah qiyaastii 4.8 eV, taasoo si weyn kor ugu qaadaysa awoodda ay u leedahay inay xakamayso tamarta sare iyo heerkulka marka la barbar dhigo agab dhaqameed sida Silicon iyo GaN.
Korantada Burburka Sare: Iyada oo leh goob burbursan oo gaar ah,Ga2O3Substratewaxay ku fiican tahay aaladaha u baahan hawlgalka korantada sare, hubinta waxtarka weyn iyo isku halaynta.
• Xasiloonida kulaylka: Xasiloonida kulaylka ee agabka ayaa ka dhigaysa mid ku habboon codsiyada deegaan aad u daran, iyada oo la ilaalinayo waxqabadka xitaa marka lagu jiro xaalado adag.
Codsiyada la taaban karo: Ku habboon in lagu isticmaalo transistor-ka awoodda waxtarka sare leh, aaladaha UV optoelectronic, iyo in ka badan, oo siinaya aasaas adag nidaamyada korantada ee horumarsan.
Khibrad u yeelo mustaqbalka tignoolajiyada semiconductor-ka Semicera'sGa2O3Substrate. Naqshadeynta si loo daboolo baahida sii kordheysa ee korantada awoodda sare iyo soo noqnoqoshada sare leh, substrate-kan ayaa dejinaya heer cusub oo waxqabad iyo adkeysi. Aamin Semicera si ay u keento xalal cusub oo loogu talagalay codsiyadaada ugu adag.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
