Semicerasi sharaf leh u bixiyaaGa2O3Epitaksi, Xalka ugu casrisan ee loogu talagalay in lagu riixo xuduudaha korontada korontada iyo optoelectronics. Farsamadan sare ee epitaxial waxay ka faa'iidaysataa sifooyinka gaarka ah ee Gallium Oxide (Ga2O3) si loo soo bandhigo waxqabadka sare ee dalabaadka.
Astaamaha Muhiimka ah:
• Bandgap Balaadhan oo Gaar ah: Ga2O3Epitaksiwaxay leedahay bandgap aadka u ballaadhan, taas oo u oggolaanaysa koronto burbursan oo sarreeya iyo hawlgal hufan oo deegaan awood sare leh.
•Dhaqdhaqaaqa Kuleylka Sare: Lakabka epitaxial wuxuu bixiyaa hab-kuleyl heer sare ah, hubinta hawlgal xasilloon xitaa marka la eego xaaladaha heerkulka sare, taasoo ka dhigaysa mid ku habboon aaladaha soo noqnoqda.
•Tayada Agabka Sare: Gaadhi tayo sare leh oo leh cilladaha ugu yar, hubinta waxqabadka ugu fiican ee qalabka iyo cimri dhererka, gaar ahaan codsiyada muhiimka ah sida transistor-ka awoodda iyo qalabka UV.
•Kala duwanaanshiyaha Codsiyada: Si fiican ugu habboon qalabka korantada, codsiyada RF, iyo optoelectronics, siinta aasaas la isku halayn karo oo loogu talagalay aaladaha jiilka soo socda.
Soo ogow kartidaGa2O3Epitaksioo leh xalal cusub oo Semicera. Alaabadayada epitaxial waxaa loogu talagalay inay la kulmaan heerarka ugu sarreeya ee tayada iyo waxqabadka, taasoo awood u siinaysa aaladahaaga inay ku shaqeeyaan waxtarka iyo kalsoonida ugu badan. Dooro Semicera si aad u hesho tignoolajiyada semiconductor gees-goynta.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
