8 lnch n-nooca Conductive SiC Substrate wuxuu bixiyaa wax qabad aan la qiyaasi karin oo loogu talagalay aaladaha elektiroonigga ah, isagoo siinaya kuleyl heer sare ah, koronto burbursan iyo tayo aad u wanaagsan codsiyada semiconductor sare. Semicera waxay siisaa xalal hogaamineed warshadeed iyada oo la farsameeyay 8 lnch n-nooca Conductive SiC Substrate.
Semicera's 8 lnch n-nooca Conductive SiC Substrate waa walax goysa oo loogu talagalay in lagu daboolo baahida sii kordheysa ee korantada korantada iyo codsiyada semiconductor ee waxqabadka sare leh. Substrate-ku wuxuu isku daraa faa'iidooyinka silikoon carbide iyo nooca n- conductivity si uu u bixiyo wax qabad aan la jaan qaadin aaladaha u baahan cufnaanta awooda sare, hufnaanta kulaylka, iyo isku halaynta.
Semicera's 8 lnch n-nooca Conductive SiC Substrate si taxadar leh ayaa loo sameeyay si loo hubiyo tayada sare iyo joogtaynta. Waxay ka kooban tahay kulayl aad u fiican si ay u daadiyaan kulaylka hufan, taas oo ka dhigaysa mid ku habboon codsiyada awoodda sare leh sida koronto rogayaasha, diodes, iyo transistors. Intaa waxaa dheer, korantada burburka sare ee substrate-ka waxay hubisaa inay u adkeysan karto xaaladaha baahida badan, siinta madal adag oo loogu talagalay qalabka elektiroonigga ah ee waxqabadka sarreeya.
Semicera waxay aqoonsan tahay doorka muhiimka ah ee 8 lnch n-nooca Conductive SiC Substrate ka ciyaaro horumarinta tignoolajiyada semiconductor. Substrate-yadayada waxaa lagu soo saaray iyadoo la adeegsanayo hababka casriga ah si loo hubiyo cufnaanta ugu yar ee cilladda, taas oo muhiim u ah horumarinta qalabyada waxtarka leh. Fiiro gaar ah u leh faahfaahinta waxay awood u siinaysaa alaabooyinka taageera soo saarista qalabka elektiroonigga ah ee soo socda oo leh waxqabad sare iyo adkeysi.
Substrate-kayaga 8 lnch n-nooca Conductive SiC waxaa sidoo kale loogu talagalay inuu daboolo baahiyaha codsiyo badan oo kala duwan laga bilaabo baabuur ilaa tamarta la cusboonaysiin karo. N-nooca conductivity wuxuu bixiyaa sifooyinka korantada ee loo baahan yahay si loo horumariyo qalab koronto oo hufan, taas oo ka dhigaysa substrate-ka qayb muhiim ah oo ka mid ah u-guurka tignoolajiyada tamarta waxtarka leh.
Semicera, waxaa naga go'an inaan bixino substrate-ka keena hal-abuurka wax-soo-saarka semiconductor. 8 lnch n-nooca Conductive SiC Substrate waa marag ma doon u heellanaanta tayada iyo heerka sare, hubinta in macaamiisheena ay helaan agabka ugu macquulsan ee codsiyadooda.
Halbeegyada aasaasiga ah
| Cabbirka | 8-inch |
| Dhexroorka | 200.0mm+0mm/-0.2mm |
| Hanuuninta dusha sare | dhidibka ka baxsan:4° dhanka <1120>士0.5° |
| Hanuuninta darajada | <1100>士1° |
| Xagalka Darajada | 90°+5°/-1° |
| Qoto dheer | 1mm+0.25mm/-0mm |
| Dugsiga Sare | / |
| Dhumucda | 500.0士25.0um/350.0±25.0um |
| Noocyo badan | 4H |
| Nooca Anshaxa | n-nooca |
