8 inch n-nooca Wax-qabadka SiC Substrate

Sharaxaad Gaaban:

8-inch n-nooca SiC Substrate waa n-nooca silicon carbide (SiC) substrate kali crystal leh dhexroor u dhexeeya 195 ilaa 205 mm iyo dhumuc u dhaxaysa 300 ilaa 650 microns. Substrate-kani waxa uu leeyahay fiirsi sare oo doping ah iyo muuqaal feejignaan si taxadar leh loo hagaajiyay, isaga oo siinaya waxqabad aad u fiican codsiyada semiconductor ee kala duwan.

 


Faahfaahinta Alaabta

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8 lnch n-nooca Conductive SiC Substrate wuxuu bixiyaa wax qabad aan la qiyaasi karin oo loogu talagalay aaladaha elektiroonigga ah, isagoo siinaya kuleyl heer sare ah, koronto burbursan iyo tayo aad u wanaagsan codsiyada semiconductor sare. Semicera waxay siisaa xalal hogaamineed warshadeed iyada oo la farsameeyay 8 lnch n-nooca Conductive SiC Substrate.

Semicera's 8 lnch n-nooca Conductive SiC Substrate waa walax goysa oo loogu talagalay in lagu daboolo baahida sii kordheysa ee korantada korantada iyo codsiyada semiconductor ee waxqabadka sare leh. Substrate-ku wuxuu isku daraa faa'iidooyinka silikoon carbide iyo nooca n- conductivity si uu u bixiyo wax qabad aan la jaan qaadin aaladaha u baahan cufnaanta awoodda sare, hufnaanta kulaylka, iyo isku halaynta.

Semicera's 8 lnch n-nooca Conductive SiC Substrate si taxadar leh ayaa loo sameeyay si loo hubiyo tayada sare iyo joogtaynta. Waxay ka kooban tahay kulaylka ugu fiican ee daadinta kulaylka hufan, taas oo ka dhigaysa mid ku habboon codsiyada awoodda sare leh sida korantada rogayaasha, diodes, iyo transistor-yada. Intaa waxaa dheer, korantada burburka sare ee substrate-kan waxay hubisaa inay u adkeysan karto xaaladaha baahida badan, siinta madal adag oo loogu talagalay qalabka elektiroonigga ah ee waxqabadka sarreeya.

Semicera waxay aqoonsan tahay doorka muhiimka ah ee 8 lnch n-nooca Conductive SiC Substrate ka ciyaaro horumarinta tignoolajiyada semiconductor. Substrate-yadayada waxaa lagu soo saaray iyadoo la adeegsanayo habab casri ah si loo hubiyo cufnaanta ugu yar ee cilladda, taas oo muhiim u ah horumarinta qalabyada waxtarka leh. Fiiro gaar ah u leh faahfaahinta waxay awood u siinaysaa alaabooyinka taageera soo saarista qalabka elektiroonigga ah ee soo socda oo leh waxqabad sare iyo adkeysi.

Substrate-kayaga 8 lnch n-nooca Conductive SiC waxaa sidoo kale loogu talagalay inuu daboolo baahiyaha codsiyo badan oo kala duwan laga bilaabo baabuur ilaa tamarta la cusboonaysiin karo. N-nooca conductivity wuxuu bixiyaa sifooyinka korantada ee loo baahan yahay si loo horumariyo qalab koronto oo hufan, taas oo ka dhigaysa substrate-ka qayb muhiim ah oo ka mid ah u gudubka tignoolajiyada tamarta waxtarka leh.

Semicera, waxaa naga go'an inaan bixino substrates oo dhaqaajiya hal-abuurka wax soo saarka semiconductor. 8 lnch n-nooca Conductive SiC Substrate waa marag ma doon u heellanaanta tayada iyo heerka sare, hubinta in macaamiisheena ay helaan agabka ugu macquulsan ee codsiyadooda.

Halbeegyada aasaasiga ah

Cabbirka 8-inch
Dhexroorka 200.0mm+0mm/-0.2mm
Hanuuninta dusha sare dhidibka ka baxsan:4° dhanka <1120>士0.5°
Hanuuninta darajada <1100>士1°
Xagalka Darajada 90°+5°/-1°
Qoto dheer 1mm+0.25mm/-0mm
Dugsiga Sare /
Dhumucda 500.0士25.0um/350.0±25.0um
Noocyo badan 4H
Nooca Anshaxa n-nooca
8lnch n-nooca sic Substrate-2
SiC wafers

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