8lnch n-nooca SiC Substrate-ka Wax-qabadka

Sharaxaad Gaaban:

8-inch n-nooca SiC Substrate waa n-nooca silicon carbide (SiC) substrate kali crystal leh dhexroor u dhexeeya 195 ilaa 205 mm iyo dhumuc u dhaxaysa 300 ilaa 650 microns. Substrate-kani waxa uu leeyahay fiirsi sare oo doping ah iyo muuqaal feejignaan si taxadar leh loo hagaajiyay, isaga oo siinaya waxqabad aad u fiican codsiyada semiconductor ee kala duwan.


Faahfaahinta Alaabta

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8 lnch n-nooca Conductive SiC Substrate wuxuu bixiyaa wax qabad aan la qiyaasi karin oo loogu talagalay aaladaha elektiroonigga ah, isagoo siinaya kuleyl heer sare ah, koronto burbursan iyo tayo aad u wanaagsan codsiyada semiconductor sare. Semicera waxay siisaa xalal hogaamineed warshadeed iyada oo la farsameeyay 8 lnch n-nooca Conductive SiC Substrate.

Semicera's 8 lnch n-nooca Conductive SiC Substrate waa walax goysa oo loogu talagalay in lagu daboolo baahida sii kordheysa ee korantada korantada iyo codsiyada semiconductor ee waxqabadka sare leh. Substrate-ku wuxuu isku daraa faa'iidooyinka silikoon carbide iyo nooca n- conductivity si uu u bixiyo wax qabad aan la jaan qaadin aaladaha u baahan cufnaanta awooda sare, hufnaanta kulaylka, iyo isku halaynta.

Semicera's 8 lnch n-nooca Conductive SiC Substrate si taxadar leh ayaa loo sameeyay si loo hubiyo tayada sare iyo joogtaynta. Waxay ka kooban tahay kulayl aad u fiican si ay u daadiyaan kulaylka hufan, taas oo ka dhigaysa mid ku habboon codsiyada awoodda sare leh sida koronto rogayaasha, diodes, iyo transistors. Intaa waxaa dheer, korantada burburka sare ee substrate-ka waxay hubisaa inay u adkeysan karto xaaladaha baahida badan, siinta madal adag oo loogu talagalay qalabka elektiroonigga ah ee waxqabadka sarreeya.

Semicera waxay aqoonsan tahay doorka muhiimka ah ee 8 lnch n-nooca Conductive SiC Substrate ka ciyaaro horumarinta tignoolajiyada semiconductor. Substrate-yadayada waxaa lagu soo saaray iyadoo la adeegsanayo habab casri ah si loo hubiyo cufnaanta ugu yar ee cilladda, taas oo muhiim u ah horumarinta qalabyada waxtarka leh. Fiiro gaar ah u leh faahfaahinta waxay awood u siinaysaa alaabooyinka taageera soo saarista qalabka elektiroonigga ah ee soo socda oo leh waxqabad sare iyo adkeysi.

Substrate-kayaga 8 lnch n-nooca Conductive SiC waxaa sidoo kale loogu talagalay inuu daboolo baahiyaha codsiyo badan oo kala duwan laga bilaabo baabuur ilaa tamarta la cusboonaysiin karo. N-nooca conductivity wuxuu bixiyaa sifooyinka korantada ee loo baahan yahay si loo horumariyo qalab koronto oo hufan, taas oo ka dhigaysa substrate-ka qayb muhiim ah oo ka mid ah u gudubka tignoolajiyada tamarta waxtarka leh.

Semicera, waxaa naga go'an inaan bixino substrate-ka keena hal-abuurka wax-soo-saarka semiconductor. 8 lnch n-nooca Conductive SiC Substrate waa marag ma doon u heellanaanta tayada iyo heerka sare, hubinta in macaamiisheena ay helaan agabka ugu macquulsan ee codsiyadooda.

Halbeegyada aasaasiga ah

Cabbirka 8-inch
Dhexroorka 200.0mm+0mm/-0.2mm
Hanuuninta dusha sare dhidibka ka baxsan:4° dhanka <1120>士0.5°
Hanuuninta darajada <1100>士1°
Xagalka Darajada 90°+5°/-1°
Qoto dheer 1mm+0.25mm/-0mm
Dugsiga Sare /
Dhumucda 500.0士25.0um/350.0±25.0um
Noocyo badan 4H
Nooca Anshaxa n-nooca

 

8lnch n-nooca sic Substrate-2
SiC wafers

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