Semicerasoo bandhigaya850V Awood Sare GaN-on-Si Epi Wafer, horumar laga gaaray hal-abuurka semiconductor. Waferkan sare ee epi wafer wuxuu isku daraa waxtarka sare ee Gallium Nitride (GaN) oo leh kharashka-waxtarka Silicon (Si), abuurista xal xoog leh oo loogu talagalay codsiyada korantada sare.
Astaamaha Muhiimka ah:
•Xakamaynta Voltage Sare: Injineer si uu u taageero ilaa 850V, GaN-on-Si Epi Wafer-kan ayaa ku habboon baahida elektiroonigga ah, awood u siinaysa hufnaan sare iyo waxqabad.
•Cufnaanta Awoodeed ee La xoojiyey: Dhaqdhaqaaqa elektaroonigga ah ee sarreeya iyo kuleylka kuleylka, tignoolajiyada GaN waxay u oggolaaneysaa naqshado isku dhafan iyo kororka cufnaanta awoodda.
•Xalka Qiimaha-Wanagsan: Adigoo ka faa'iidaysanaya silikoon sida substrate-ka, waferkan epi wuxuu bixiyaa beddelka kharash-ool ah oo beddelka wafer-dhaqameedka GaN, iyada oo aan waxyeello loo geysan tayada ama waxqabadka.
•Kala Duwan Codsiga BalaadhanKu fiican in loo isticmaalo beddelayaasha korantada, amplifiers RF, iyo aaladaha kale ee tamarta sare leh, hubinta isku halaynta iyo cimri dhererka
Ku baadh mustaqbalka tignoolajiyada korantada sare leh ee Semicera's850V Awood Sare GaN-on-Si Epi Wafer. Loogu talagalay codsiyada cidhiidhiga ah, alaabtan ayaa hubinaysa in qalabkaaga elegtarooniga ah ay ku shaqeeyaan waxtarka iyo kalsoonida ugu badan. U dooro Semicera baahiyahaaga jiilka soo socda.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
