8 inch N-nooca SiC Wafer

Sharaxaad Gaaban:

Semicera's 8 Inch N-nooca SiC Wafers waxaa loo naqshadeeyay codsiyada cirifka leh ee tamarta sare iyo kuwa soo noqnoqda ee elegtarooniga ah. Wafers-yadani waxay bixiyaan sifooyin koronto iyo kuleyl oo heersare ah, iyagoo hubinaya waxqabadka hufan ee deegaan baahida loo qabo. Semicera waxay soo saartaa hal-abuurnimo iyo isku halaynta qalabka semiconductor.


Faahfaahinta Alaabta

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Semicera's 8 Inch N-nooca SiC Wafers ayaa safka hore kaga jira hal-abuurka semiconductor, siinta saldhig adag oo loogu talagalay horumarinta aaladaha elektiroonigga ah ee waxqabadka sarreeya. Wafers-yadan waxaa loogu talagalay inay buuxiyaan baahida adag ee codsiyada elektaroonigga ah ee casriga ah, laga bilaabo korontada elektiroonigga ah ilaa wareegyada soo noqnoqda ee sarreeya.

Doping-ka nooca N ee waferradan SiC waxay wanaajisaa dhaqdhaqaaqa korantada, taas oo ka dhigaysa inay ku fiican yihiin codsiyo kala duwan, oo ay ku jiraan diodh-koronta, transistor-ka, iyo amplifiers. Daawashada sare waxay hubisaa luminta tamarta ugu yar iyo hawlgal hufan, kuwaas oo muhiim u ah aaladaha ku shaqeeya soo noqnoqoshada sare iyo heerarka korantada.

Semicera waxay shaqaaleysiisaa farsamooyin wax soo saar sare leh si ay u soo saarto wafers SiC oo leh lebis dusha sare ah iyo cilladaha ugu yar. Heerkan saxda ah wuxuu muhiim u yahay codsiyada u baahan waxqabad joogto ah iyo adkeysi, sida hawada hawada, baabuurta, iyo warshadaha isgaarsiinta.

Ku darida Semicera's 8-inch N-nooca SiC Wafers ee khadkaaga wax soo saarka waxay ku siinaysaa aasaas abuurista qaybo u adkeysan karta jawi adag iyo heerkul sare. Wafers-yadani waxay ku fiican yihiin codsiyada beddelka awoodda, tignoolajiyada RF, iyo meelaha kale ee baahida loo qabo.

Doorashada Semicera's 8 Inch N-nooca SiC Wafers waxay la macno tahay maalgelinta badeecada isku daraysa saynis tayo sare leh iyo injineer sax ah. Semicera waxaa ka go'an inay horumariso awooda tignoolajiyada semiconductor, iyadoo bixisa xalal kor u qaadaya hufnaanta iyo isku halaynta aaladahaaga elektiroonigga ah.

Walxaha

Wax soo saar

Cilmi baaris

nacasnimo

Qiyaasta Crystal

Noocyo badan

4H

Khaladka jihaynta dusha sare

<11-20>4±0.15°

Qiyaasta Korontada

Dopant

n-nooca Nitrogen

iska caabin

0.015-0.025ohm · cm

Halbeegyada Makaanikada

Dhexroorka

150.0 ± 0.2mm

Dhumucda

350± 25 μm

Hanuuninta fidsan ee aasaasiga ah

[1-100]±5°

Dhererka siman ee aasaasiga ah

47.5 ± 1.5mm

Dabaqa labaad

Midna

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Qaansada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Wajiga hore (Si-wejiga) qallafsanaanta (AFM)

Ra≤0.2nm (5μm*5μm)

Qaab dhismeedka

Cufnaanta tuubbada yar

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Wasakhda birta

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Tayada hore

Hore

Si

Dhammaadka dusha sare

Si-wejiga CMP

Qaybaha

≤60ea/wafer (xajmiga≥0.3μm)

NA

xoqid

≤5ea/mm Dhererka isugeynta ≤ Dhexroorka

Dhererka isugeynta≤2* Dhexroor

NA

Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga

Midna

NA

Chips-ka-geeska/indents/jabka/taargada hex

Midna

Aagagga nooca badan

Midna

Aagga isugeynta≤20%

Aagga isugeynta≤30%

Calaamadaynta laysarka hore

Midna

Tayada dambe

Dhammaadka dhabarka

C-waji CMP

xoqid

≤5ea/mm, Dhererka isugeynta≤2* Dhexroor

NA

Cilladaha dhabarka (dhab-jeexyada geesaha)

Midna

Dhabar xumada

Ra≤0.2nm (5μm*5μm)

Calaamadaynta laser-ka dambe

1 mm (laga bilaabo cidhifka sare)

Cidhif

Cidhif

Chamfer

Baakadaha

Baakadaha

Epi-diyaar ah oo leh baakad vacuum ah

Baakadaha cajaladaha wafer-ka badan

* Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD.

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SiC wafers

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