Semicera's 8 Inch N-nooca SiC Wafers ayaa safka hore kaga jira hal-abuurka semiconductor, siinta saldhig adag oo loogu talagalay horumarinta aaladaha elektiroonigga ah ee waxqabadka sarreeya. Wafers-yadan waxaa loogu talagalay inay buuxiyaan baahida adag ee codsiyada elektaroonigga ah ee casriga ah, laga bilaabo korontada elektiroonigga ah ilaa wareegyada soo noqnoqda ee sarreeya.
Doping-ka nooca N ee waferradan SiC waxay wanaajisaa dhaqdhaqaaqa korantada, taas oo ka dhigaysa inay ku fiican yihiin codsiyo kala duwan, oo ay ku jiraan diodh-koronta, transistor-ka, iyo amplifiers. Daawashada sare waxay hubisaa luminta tamarta ugu yar iyo hawlgal hufan, kuwaas oo muhiim u ah aaladaha ku shaqeeya soo noqnoqoshada sare iyo heerarka korantada.
Semicera waxay shaqaaleysiisaa farsamooyin wax soo saar sare leh si ay u soo saarto waferrada SiC oo leh lebbisan dusha sare iyo cilladaha ugu yar. Heerkan saxda ah wuxuu muhiim u yahay codsiyada u baahan waxqabad joogto ah iyo adkeysi, sida hawada hawada, baabuurta, iyo warshadaha isgaarsiinta.
Ku darida Semicera's 8-inch N-nooca SiC Wafers ee khadkaaga wax soo saarka waxay ku siinaysaa aasaas abuurista qaybo u adkeysan karta jawi adag iyo heerkul sare. Wafers-yadani waxay ku fiican yihiin codsiyada beddelka awoodda, tignoolajiyada RF, iyo meelaha kale ee baahida loo qabo.
Doorashada Semicera's 8 Inch N-nooca SiC Wafers waxay la macno tahay maalgelinta badeecada isku daraysa saynis tayo sare leh iyo injineer sax ah. Semicera waxaa ka go'an inay horumariso awooda tignoolajiyada semiconductor, iyadoo bixisa xalal kor u qaadaya hufnaanta iyo isku halaynta aaladahaaga elektiroonigga ah.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
