6 inch n-nooca substrate sic

Sharaxaad Gaaban:

6-inch n-nooca SiC substrate‌ waa walxo semiconductor ah oo lagu garto isticmaalka cabbirka wafer 6-inch, kaas oo kordhiya tirada aaladaha lagu soo saari karo hal wafer oo ka badan aag weyn, taas oo hoos u dhigaysa qiimaha heerka aaladda. . Horumarinta iyo codsiga 6-inch n-nooca SiC substrates waxay ka faa'iideysteen horumarinta tignoolajiyada sida habka kobaca RAF, kaas oo yareynaya kala-baxa iyada oo la jarayo crystals oo ay weheliyaan kala-baxyada iyo jihooyinka barbar socda iyo dib-u-soo-baxa crystals, taas oo hagaajinaysa tayada substrate-ka. Codsiga substrate-kani waxa uu muhiimad weyn u leeyahay horumarinta hufnaanta wax-soo-saarka iyo dhimista kharashyada qalabka korontada ee SiC.

 


Faahfaahinta Alaabta

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Silicon carbide (SiC) walxo crystal ah oo kali ah ayaa leh ballac ballaaran oo faaruq ah (~ Si 3 jeer), korantada kuleylka sare (~ Si 3.3 jeer ama GaAs 10 jeer), heerka guuritaanka korantada elektaroonigga sare (~ Si 2.5 jeer), koronto jaban oo sarreeya garoonka (~ Si 10 jeer ama GaAs 5 jeer) iyo astaamo kale oo muuqda.

Qalabka jiilka seddexaad ee semiconductor inta badan waxaa ka mid ah SiC, GaN, dheeman, iwm., sababtoo ah ballaca farqiga band (Tusaale ahaan) wuu ka weyn yahay ama la mid yahay 2.3 volts elektaroonik ah (eV), oo sidoo kale loo yaqaan qalabka farqiga ballaaran ee semiconductor. Marka la barbardhigo jiilka koowaad iyo labaad ee qalabka semiconductor, jiilka saddexaad ee qalabka semiconductor waxay leeyihiin faa'iidooyinka kuleylka kuleylka sare, burburka sare ee korantada, heerka guuritaanka korantada sare ee korantada iyo tamarta isku-xidhka sare, kaas oo buuxin kara shuruudaha cusub ee tiknoolajiyada casriga ah ee elektiroonigga ah ee sare. heerkulka, awoodda sare, cadaadis sare, soo noqnoqda sare iyo caabbinta shucaaca iyo xaalado kale oo adag. Waxay leedahay rajada codsiga muhiimka ah ee beeraha difaaca qaranka, duulista, hawada, sahaminta saliidda, kaydinta indhaha, iwm, iyo hoos u dhigi kartaa khasaaraha tamarta by in ka badan 50% in warshado badan oo istiraatiiji ah sida isgaarsiinta broadband, tamarta qoraxda, wax soo saarka baabuurta, nalalka semiconductor, iyo grid smart, oo yarayn kara mugga qalabka in ka badan 75%, taas oo muhiim u ah horumarka sayniska iyo tignoolajiyada aadanaha.

Tamarta Semicera waxay siin kartaa macaamiisha tayada wax-qabad ee tayada sare leh (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) substrate silicon carbide; Intaa waxaa dheer, waxaan ku siin karnaa macaamiisha silikoon carbide xaashida epitaxial isku mid ah oo isku mid ah; Waxaan sidoo kale u habeyn karnaa xaashida epitaxial iyadoo loo eegayo baahiyaha gaarka ah ee macaamiisha, mana jirto wax dalab ah oo ugu yar.

QIIMAYNTA AALADAHA AASAASIGA AH

Cabbirka

 6-inch
Dhexroorka 150.0mm+0mm/-0.2mm
Hanuuninta dusha sare dhidibka ka baxsan:4° dhanka <1120>±0.5°
Dhererka Guriga aasaasiga ah 47.5mm1.5 mm
Hanuuninta Flat Primary <1120>±1.0°
Dugsiga Sare Midna
Dhumucda 350.0um±25.0um
Noocyo badan 4H
Nooca Anshaxa n-nooca

Qeexitaannada tayada kristaalka

6-inch
Shayga Heerka P-MOS P-SBD Darajada
iska caabin 0.015Ω · cm-0.025Ω · cm
Noocyo badan Midna lama ogola
Cufnaanta Dheef-yar ≤0.2/cm2 ≤0.5/cm2
EPD ≤4000/cm2 ≤8000/cm2
TED ≤3000/cm2 ≤6000/cm2
BPD ≤1000/cm2 ≤2000/cm2
TSD ≤300/cm2 ≤1000/cm2
SF (waxaa lagu qiyaasay UV-PL-355nm) ≤0.5% aagga ≤1% aagga
Taarikada hex by iftiinka xoogga sare Midna lama ogola
Kaarboon muuqaal ah oo lagu daro iftiinka xoogga badan Aagga isku-dhafka ah≤0.05%
微信截图_20240822105943

iska caabin

Noocyo badan

6 lnch n-nooca sic substrate (3)
6 lnch n-nooca sic substrate (4)

BPD&TSD

6 lnch n-nooca substrate sic (5)
SiC wafers

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