Semicera's 6 Inch Semi-Insulating HPSI SiC Wafers waxaa loogu talagalay inay buuxiyaan baahida adag ee tignoolajiyada casriga ah ee semiconductor. Nadiifinta gaarka ah iyo joogtaynta, waferradani waxay u adeegaan sidii aasaas la isku halayn karo oo lagu horumarinayo qaybaha elektiroonigga ah ee waxtarka leh.
Waferrada HPSI SiC waxay caan ku yihiin kuleylkooda heer sare ah iyo dahaarka korantada, kuwaas oo muhiim u ah wanaajinta waxqabadka aaladaha korantada iyo wareegyada soo noqnoqda ee sarreeya. Alaabooyinka dahaadhka ah waxay ka caawiyaan yaraynta faragelinta korantada iyo sare u qaadida waxtarka qalabka.
Habka wax-soo-saarka tayada sare leh ee ay shaqaalayso Semicera waxay hubisaa in maraqa kasta uu leeyahay dhumuc isku mid ah iyo cilladaha dusha ugu yar. Saxnimadani waxay lama huraan u tahay codsiyada horumarsan sida aaladaha soo noqnoqda raadiyaha, rogayaasha awoodda, iyo nidaamyada LED, halkaasoo waxqabadka iyo cimri dhererku ay yihiin arrimo muhiim ah.
Iyadoo la adeegsanaayo farsamooyinka wax soo saarka ee casriga ah, Semicera waxay bixisaa wafers kuwaas oo aan buuxin oo kaliya laakiin ka sarreeya heerarka warshadaha. Cabbirka 6-inji wuxuu bixiyaa dabacsanaan xagga kor u qaadista wax soo saarka, iyada oo u adeegaysa cilmi-baarista iyo codsiyada ganacsiga ee qaybta semiconductor.
Doorashada Semicera's 6 Inch Semi-Insulating HPSI SiC Wafers waxay la macno tahay maalgelinta badeecada keenta tayada iyo waxqabadka joogtada ah. Wafers-yadani waa qayb ka mid ah ballan-qaadka Semicera ee horumarinta awoodaha tignoolajiyada semiconductor iyada oo loo marayo agab cusub iyo farshaxannimo hufan.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
