Semicera's 6 Inch N-nooca SiC Wafer wuxuu u taagan yahay safka hore ee tignoolajiyada semiconductor. Loogu sameeyay waxqabadka ugu wanaagsan, waferkan waxa uu ka sarreeyaa awood sare, soo noqnoqoshada sare, iyo codsiyada kulaylka sare, ee lagama maarmaanka u ah aaladaha elegtarooniga ah ee horumarsan.
Waferkayaga 6 inch N-nooca SiC waxa uu leeyahay dhaq-dhaqaaq elektaroonik ah oo sarreeya iyo iska caabin hooseeya, kuwaas oo ah halbeegyada muhiimka ah ee aaladaha korantada sida MOSFETs, diodes, iyo qaybo kale. Guryahaani waxay xaqiijinayaan beddelka tamarta hufan iyo hoos u dhigidda soo saarista kulaylka, kor u qaadista waxqabadka iyo cimriga hababka elektaroonigga ah.
Nidaamyada xakamaynta tayada adag ee Semicera waxay xaqiijiyaan in wafer kasta oo SiC ah uu ilaaliyo fidsanaanta dusha sare iyo cilladaha ugu yar. Fiiro gaar ah u leh tafatirka ayaa hubinaysa in waferradayadu ay buuxiyaan shuruudaha adag ee warshadaha sida baabuurta, hawada hawada, iyo isgaarsiinta.
Marka lagu daro sifooyinkeeda koronto ee sare, nooca N-nooca SiC wafer wuxuu bixiyaa degenaansho kulayl adag iyo iska caabin heerkul sare ah, taasoo ka dhigaysa mid ku habboon bay'ada laga yaabo inay alaabta caadiga ahi ku fashilmaan. Awooddani waxay si gaar ah qiimo ugu leedahay codsiyada ku lug leh hawlgallada soo noqnoqda sare iyo kuwa awoodda sare leh.
Markaad dooranayso Semicera's 6 Inch N-nooca SiC Wafer, waxaad maalgashanaysaa badeecad matalaysa meesha ugu sarreysa ee hal-abuurka semiconductor. Waxaa naga go'an inaan bixinno dhismooyinka qalabka casriga ah, hubinta in la-hawlgalayaashayada warshadaha kala duwan ay helaan agabka ugu wanaagsan ee horumarkooda teknoolojiyadda.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
