Semicera's 6-inch LiNbO3 Bonding Wafer waxaa loo habeeyey si uu u buuxiyo heerarka adag ee warshadaha semiconductor, oo bixiya waxqabad aan la barbar dhigi karin ee cilmi baarista iyo deegaanka wax soo saarka. Haddi ay ahaan lahayd optoelectronics-dhamaadka sare, MEMS, ama baakadaha semiconductor sare, waferkan isku xidhka ahi waxa uu bixiyaa isku halaynta iyo cimri dhererka lagama maarmaanka u ah horumarinta tignoolajiyada gees-ka-caya.
Warshadaha semiconductor-ka, 6-inch LiNbO3 Bonding Wafer waxaa si weyn loogu isticmaalaa isku xirka lakabyada khafiifka ah ee aaladaha indhaha, dareemayaasha, iyo nidaamyada microelectromechanical (MEMS). Sifooyinkeeda gaarka ah ayaa ka dhigaya qayb qiimo leh oo loogu talagalay codsiyada u baahan is dhexgalka lakabka saxda ah, sida samaynta wareegyada isku dhafan (ICs) iyo qalabka sawir-qaadista. Nadiifinta sare ee waferka waxay hubisaa in badeecada ugu dambeysa ay ilaaliso waxqabadka ugu fiican, iyadoo yareyneysa khatarta wasakheynta ee saameyn karta isku halaynta qalabka.
| Qalabka kulaylka iyo korantada ee LiNbO3 | |
| barta dhalaalaysa | 1250 ℃ |
| Heerkulka Curie | 1140 ℃ |
| Dhaqdhaqaaqa kulaylka | 38 W/m/K @ 25 ℃ |
| Isku-dubbaridka ballaadhinta kulaylka (@25°C) | //a,2.0×10-6/K //c,2.2×10-6/K |
| iska caabin | 2×10-6Ω·cm @ 200 ℃ |
| Dielectric joogto ah | εS11/ε0=43，εT11/ε0=78 εS33/ε0=28，εT33/ε0= 2 |
| Piezoelectric joogto ah | D22=2.04×10-11C/N D33=19.22×10-11C/N |
| Iskuxidhka elektro-optic | γT33=32 galabnimo/V, γS33=31 galabnimo/V γT31=10 pm/V, γS31=8.6 galabnimo/V γT22=6.8 pm/V, γS22=3.4 galabnimo/V |
| Korontada badh-mawjada, DC | 3.03 KV 4.02 KV |
6-inch LiNbO3 Bonding Wafer ee Semicera waxaa si gaar ah loogu talagalay codsiyada horumarsan ee warshadaha semiconductor iyo optoelectronics. Waxaa loo yaqaan caabbinta xirashada sare, xasilloonida kulaylka sare, iyo nadiifnimada gaarka ah, waferkan isku xira ayaa ku habboon wax soo saarka semiconductor-ka wax qabad sare leh, oo bixisa isku haleyn muddo dheer ah iyo saxsanaan xitaa xaaladaha baahida.
Lagu farsameeyay tignoolajiyada gees-goynta ah, 6-inch LiNbO3 Bonding Wafer waxay hubisaa faddaraynta ugu yar, taas oo muhiim u ah hababka wax soo saarka semiconductor ee u baahan heerar sare oo nadiif ah. Degganaanshaheeda kulaylka ah ee aadka u fiican ayaa u oggolaanaysa inay u adkeysato heerkulka sare iyada oo aan waxyeello u geysan sharafta qaabdhismeedka, taas oo ka dhigaysa doorasho lagu kalsoonaan karo oo loogu talagalay codsiyada isku-xidhka heerkulka sare. Intaa waxaa dheer, caabbinta xirashada ee wafer-ka waxay hubisaa inay si joogto ah u shaqeyso isticmaalka dheer, iyadoo bixisa cimri dheer iyo yareynta baahida beddelka joogtada ah.
