1.Ku saabsanSilicon Carbide (SiC) Wafers Epitaxial
Silicon Carbide (SiC) waferrada epitaxial waxa lagu sameeyaa iyada oo lagu shubo hal lakab oo crystal ah maraqa iyada oo la isticmaalayo wafer silikoon carbide hal kiristaalo ah sida substrate, badiyaa by kaydinta uumiga kiimikada (CVD). Waxaa ka mid ah, silikoon carbide epitaxial waxaa lagu diyaariyaa koraya lakabka silikoon carbide epitaxial ee dusha sare ee silikoon carbide substrate, oo lagu sii farsameeyay aaladaha waxqabadka sare leh.
2.Silicon Carbide Epitaxial WaferTilmaamaha
Waxaan bixin karnaa 4, 6, 8 inji N-nooca 4H-SiC wafers epitaxial. Waferka 'epitaxial' wuxuu leeyahay xawaarihiisa ballaaran, xawaaraha qulqulka korantada ee korantada sare, gaaska elektarooniga ah ee laba-geesoodka ah, iyo xoogga goobta burburka sareeyo. Qalabkani waxay ka dhigaan qalabka iska caabbinta heerkulka sare, caabbinta korantada sare, xawaaraha beddelka degdega ah, iska caabin hooseeya, cabbir yar iyo miisaan fudud.
3. Codsiyada SiC Epitaxial
SiC epitaxial waferwaxaa inta badan loo isticmaalaa in Schottky diode (SBD), bir oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), transistor junction transistor (BJT), thyristor (SCR), transistor gate bipolar transistor (IGBT), kaas oo loo isticmaalo in danab-yar, dhexdhexaad-voltage iyo beeraha-voltage sare. Hadda,SiC epitaxial waferscodsiyada korantada sare waxay ku jiraan marxaladda cilmi baarista iyo horumarinta adduunka oo dhan.
