Semicera's 4”6” Nadiifin Sare Semi-Insulating SiC Ingots waxaa loogu talagalay inay la kulmaan heerarka saxda ah ee warshadaha semiconductor. Ingots-yadan waxaa lagu soo saaraa iyada oo diiradda la saarayo nadiifnimada iyo joogtaynta, taas oo ka dhigaysa doorasho ku habboon codsiyada awoodda sare iyo kuwa soo noqnoqda ee waxqabadka ugu muhiimsan.
Tilmaamaha gaarka ah ee kuwan SiC-ga ah, oo ay ku jiraan kuleyl kuleyl sare iyo iska caabin koronto oo heer sare ah, ayaa ka dhigaya kuwo si gaar ah ugu habboon isticmaalka korantada korantada iyo qalabka microwave-ka. Dabeecaddooda semi-insulating waxay u ogolaataa kuleylka waxtarka leh iyo faragelinta ugu yar ee korantada, taasoo horseedaysa qaybo waxtar leh oo la isku halleyn karo.
Semicera waxay shaqaaleysiisaa habab wax soo saar oo casri ah si ay u soo saaraan wax-soo-saar leh tayada kristal ee aan caadiga ahayn iyo lebbiska. Saxnimadani waxay hubinaysaa in wax kasta oo la gashado si kalsooni leh loogu isticmaali karo codsiyada xasaasiga ah, sida amplifiers-sare-sare, diodes laser, iyo aaladaha kale ee optoelectronic.
Waxaa lagu heli karaa cabbirrada 4-inch iyo 6-inch, Semicera's SiC ingots waxay bixisaa dabacsanaanta looga baahan yahay cabbirrada wax soo saarka ee kala duwan iyo shuruudaha tignoolajiyada. Hadday tahay cilmi-baadhis iyo horumarin ama wax-soo-saar ballaadhan, kuwan wax-soo-saarka ah waxay bixiyaan waxqabadka iyo cimri-dhererka ay u baahan yihiin nidaamyada casriga ah ee elektiroonigga ah.
Adigoo dooranaya Semicera's High Purity Semi-Insulating SiC Ingots, waxaad maalgashanaysaa alaab isku daraysa sayniska agabka horumarsan iyo khibrad wax soo saar oo aan la mid ahayn. Semicera waxay u heellan tahay inay taageerto hal-abuurka iyo kobaca warshadaha semiconductor, iyadoo bixisa agab awood u leh horumarinta aaladaha elektiroonigga ah.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
