41 xabbo 4 inch graphite base MOCVD qaybaha qalabka

Sharaxaad Gaaban:

Soo bandhigida badeecada iyo isticmaalka: Waxaa la dhigay 41 xabbo oo 4 saacadood substrate ah, oo loo isticmaalo koritaanka LED oo leh filim epitaxial buluug-cagaaran ah

Goobta qalabka ee alaabta: qolka falcelinta, xiriir toos ah oo la leh waferka

Alaabooyinka hoose ee ugu muhiimsan: chips LED

Suuqa ugu weyn: LED


Faahfaahinta Alaabta

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Sharaxaada

Shirkaddayadu waxay bixisaaDahaarka SiCadeegyada habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo Silicon ay ka falceliyaan heerkulka sare si ay u helaan daahirsanaan sare SiC molecules, molecules lagu shubo dusha alaabta dahaarka ah, samaynta alakabka ilaalinta ee SiC.

41 xabbo 4 inch graphite base MOCVD qaybaha qalabka

Tilmaamaha ugu muhiimsan

1. Iska caabbinta oksaydhka heerkulka sare:
caabbinta oksaydhisku weli aad bay u fiican tahay marka heerkulku uu sarreeyo sida 1600 ℃.
2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalada koloriinaynta heerkulka sare.
3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.
4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.

 

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

Guryaha SiC-CVD
Dhismaha Crystal FCC β wejiga
Cufnaanta g/cm³ 3.21
Adag Vickers adag 2500
Cabirka Hadhuudhka μm 2 ~ 10
Nadiifnimada Kiimikada % 99.99995
Awoodda kulaylka J·k-1 ·K-1 640
Heerkulka Sublimation 2700
Xoogga Felexural MPa (RT 4-dhibcood) 415
Dhallinta Modul Gpa (4pt laab, 1300 ℃) 430
Balaadhinta kulaylka (CTE) 10-6K-1 4.5
Dhaqdhaqaaqa kulaylka (W/mK) 300
Goobta shaqada ee Semicera
Goobta shaqada ee Semicera 2
Mashiinka qalabka
Habaynta CNN, nadiifinta kiimikada, daahan CVD
Semicera Ware House
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