Silicon carbide (SiC) walxo crystal ah oo kali ah ayaa leh ballac ballaaran oo faaruq ah (~ Si 3 jeer), korantada kuleylka sare (~ Si 3.3 jeer ama GaAs 10 jeer), heerka guuritaanka korantada elektaroonigga sare (~ Si 2.5 jeer), koronto jaban oo sarreeya garoonka (~ Si 10 jeer ama GaAs 5 jeer) iyo astaamo kale oo muuqda.
Tamarta Semicera waxay siin kartaa macaamiisha tayada wax-qabad ee tayada sare leh (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) substrate silicon carbide; Intaa waxaa dheer, waxaan ku siin karnaa macaamiisha silikoon carbide xaashida epitaxial isku mid ah oo isku mid ah; Waxaan sidoo kale u habeyn karnaa xaashida epitaxial iyadoo loo eegayo baahiyaha gaarka ah ee macaamiisha, mana jirto wax dalab ah oo ugu yar.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 99.5 - 100mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 32.5 ± 1.5mm | ||
| Booska fidsan ee labaad | 90° CW dabaqa hoose ±5°. silikon kor u kaca | ||
| Dhererka siman ee labaad | 18± 1.5mm | ||
| TTV | ≤5 μm | ≤10 μm | ≤20 μm |
| LTV | ≤2 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | NA |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤20 μm | ≤45 μm | ≤50 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | ≤1 ea/cm2 | ≤5 ea/cm2 | ≤10 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤2ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | NA | |
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Bacda gudaha waxaa ka buuxa nitrogen, bacda dibaddana waa la faaruqiyay. Cajalad wafer-badan, diyaar u ah. | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
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