4 inch N-nooca SiC Substrate

Semicera's 4 Inch N-nooca SiC Substrates waxaa loo sameeyay si ay ula kulmaan heerarka saxda ah ee warshadaha semiconductor. Substrates-yadani waxay bixiyaan aasaas waxqabad sare leh oo loogu talagalay codsiyo badan oo elektaroonig ah, oo bixiya dabeecad aan caadi ahayn iyo guryaha kulaylka.

N-nooca doping-ka ee substrate-yadan SiC waxay wanaajisaa dhaqdhaqaaqa korantada, taasoo ka dhigaysa inay si gaar ah ugu habboon yihiin codsiyada tamarta sare iyo kuwa soo noqnoqda. Gurigani wuxuu u oggolaanayaa in si hufan loogu shaqeeyo aaladaha sida diodes, transistors, iyo amplifiers, halkaas oo la yareeyo khasaaraha tamarta ay muhiim u tahay.

Semicera waxay isticmaashaa hababka wax soo saarka ee casriga ah si loo hubiyo in substrate kasta uu muujiyo tayada sare ee tayada sare leh iyo labbiska. Saxnimadani waxay muhiim u tahay codsiyada korantada elektiroonigga ah, aaladaha microwave-ka, iyo teknoolojiyadda kale ee u baahan waxqabad la isku halayn karo marka ay jiraan xaalado aad u daran.

Ku darista substrates-ka nooca SiC ee Semicera ee khadkaaga wax soo saarka macnaheedu waa ka faa'iidaysiga agabka bixiya kulaylka sareeyo iyo xasiloonida korantada. Substrate-yadani waxay ku habboon yihiin abuurista qaybo u baahan adkaysi iyo hufnaan, sida nidaamyada beddelka awoodda iyo cod-weyneyaasha RF.

Adigoo dooranaya Semicera's 4 Inch N-nooca SiC Substrates, waxaad maalgashanaysaa badeecad isku daraysa sayniska agabka cusub iyo farsamada farsamada. Semicera waxay sii wadaa hogaaminta warshadaha iyadoo siinaya xalal taageeraya horumarinta tignoolajiyada semiconductor-ka-goynta, hubinta waxqabadka sare iyo kalsoonida.