Semicera's 4 Inch Highity Purity Semi-Insulating (HPSI) SiC Substrates Wafer Polished Laba-dhinac ayaa loo habeeyey si ay u buuxiyaan shuruudaha saxda ah ee warshadaha semiconductor. Substrates-yadan waxaa loogu talagalay flatness gaar ah iyo daahirsanaan, oo bixiya madal ugu fiican ee qalabka elektarooniga ah-goynta.
Waferradan HPSI SiC waxaa lagu kala soocaa kuleylkooda sareeyo iyo guryaha dahaarka korantada, taasoo ka dhigaysa doorasho aad u wanaagsan codsiyada soo noqnoqda iyo awooda sare. Nidaamka midabaynta laba-geesoodka ah wuxuu hubinayaa qallafsanaanta dusha ugu yar, taas oo muhiim u ah kor u qaadista waxqabadka qalabka iyo cimri dhererka.
Nadiifadda sare ee Semicera's SiC wafers waxay yaraynaysaa cilladaha iyo wasakhda, taasoo horseedaysa heerar wax-soosaar sare leh iyo isku halaynta aaladda. Substrate-yadani waxay ku habboon yihiin codsiyo badan oo kala duwan, oo ay ku jiraan aaladaha mikrowave, korantada elektiroonigga ah, iyo tignoolajiyada LED, halkaasoo saxnaanta iyo cimri dhererka ay lagama maarmaan tahay.
Iyada oo diiradda la saarayo hal-abuurka iyo tayada, Semicera waxay isticmaashaa farsamooyinka wax soo saarka ee horumarsan si ay u soo saarto wafers oo buuxiya shuruudaha adag ee elektiroonigga casriga ah. Naqshadeynta laba-geesoodka ah kaliya ma wanaajiso xoogga farsamada laakiin sidoo kale waxay fududeysaa isdhexgalka wanaagsan ee qalabka kale ee semiconductor.
Adiga oo dooranaya Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Substrates Wafer Polished, saarayaashu waxay ka faa'iidaysan karaan faa'iidooyinka maaraynta kulaylka ee la xoojiyey iyo dahaadhka korantada, iyaga oo u gogol xaaraya horumarinta qalab elektaroonik ah oo hufan oo xoog badan. Semicera waxay sii wadaa hogaaminta warshadaha iyada oo ay ka go'an tahay tayada iyo horumarinta tignoolajiyada.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
