4 inch Nadiif Sare Semi-Insulating HPSI SiC Substrate-ka Wafer-daran ee laba-dhinac ah

Semicera's 4 Inch Highity Purity Semi-Insulating (HPSI) SiC Substrates Wafer Polished Laba-dhinac ayaa loo habeeyey si ay u buuxiyaan shuruudaha saxda ah ee warshadaha semiconductor. Substrates-yadan waxaa loogu talagalay flatness gaar ah iyo daahirsanaan, oo bixiya madal ugu fiican ee qalabka elektarooniga ah-goynta.

Waferradan HPSI SiC waxaa lagu kala soocaa kuleylkooda sareeyo iyo guryaha dahaarka korantada, taasoo ka dhigaysa doorasho aad u wanaagsan codsiyada soo noqnoqda iyo awooda sare. Nidaamka midabaynta laba-geesoodka ah wuxuu hubinayaa qallafsanaanta dusha ugu yar, taas oo muhiim u ah kor u qaadista waxqabadka qalabka iyo cimri dhererka.

Nadaafadda sare ee Semicera's SiC wafers waxay yaraynaysaa ciladaha iyo wasakhda, taasoo horseedaysa heerar sare oo wax-soosaar iyo isku halaynta aaladda. Substrate-yadani waxay ku habboon yihiin codsiyo badan oo kala duwan, oo ay ku jiraan aaladaha mikrowave, korantada elektiroonigga ah, iyo tignoolajiyada LED, halkaasoo saxnaanta iyo cimri dhererka ay lagama maarmaan tahay.

Iyada oo diiradda la saarayo hal-abuurka iyo tayada, Semicera waxay isticmaashaa farsamooyinka wax soo saarka ee horumarsan si ay u soo saarto wafers oo buuxiya shuruudaha adag ee elektiroonigga casriga ah. Naqshadeynta laba-geesoodka ah kaliya ma wanaajiso xoogga farsamada laakiin sidoo kale waxay fududeysaa isdhexgalka wanaagsan ee qalabka kale ee semiconductor.

Adiga oo dooranaya Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Substrates Wafer Polished, saarayaashu waxay ka faa'iidaysan karaan faa'iidooyinka maaraynta kulaylka ee la xoojiyey iyo dahaadhka korantada, iyaga oo u gogol xaaraya horumarinta qalab elektaroonik ah oo hufan oo xoog badan. Semicera waxay sii wadaa hogaaminta warshadaha iyada oo ay ka go'an tahay tayada iyo horumarinta tignoolajiyada.