Semicera's 4" 6" Semi-Insulating SiC Substrate waa shay tayo sare leh oo loogu talagalay in lagu buuxiyo shuruudaha adag ee codsiyada RF iyo qalabka korontada. Substrate-ku wuxuu isku daraa kuleyliyaha kuleylka ugu fiican iyo korantada burburka sare ee silikoon carbide oo leh sifooyin-ku-salaysan, taasoo ka dhigaysa doorasho ku habboon horumarinta aaladaha semiconductor sare.
4" 6" Semi-Insulating SiC Substrate si taxadir leh ayaa loo soo saaray si loo hubiyo in walaxda nadiifka ah ay aad u sarayso iyo waxqabadka dahaadhka badheed joogta ah. Tani waxay hubinaysaa in substrate-ku uu bixiyo go'doominta lagama maarmaanka ah ee qalabka RF sida amplifiers iyo transistor-yada, iyadoo sidoo kale la siinayo waxtarka kulaylka ee looga baahan yahay codsiyada awoodda sare leh. Natiijadu waa substrate la taaban karo oo loo isticmaali karo tiro balaadhan oo ah alaabada elektarooniga ah ee waxqabadka sare leh.
Semicera waxa ay aqoonsan tahay muhiimada ay leedahay bixinta substrate-ka la isku halayn karo, cilad la'aanta ah ee codsiyada semiconductor ee muhiimka ah. Substrate-kayaga 4" 6" Semi-Insulating SiC Substrate waxaa la soo saaray iyadoo la adeegsanayo farsamooyinka wax soo saarka ee horumarsan ee yareynaya cilladaha crystal iyo hagaajinta isku midka ah walxaha. Tani waxay awood u siinaysaa badeecada inay taageerto soo saarista aaladaha leh waxqabad la xoojiyey, xasilooni, iyo cimrigeeda.
Ballanqaadka Semicera ee tayada waxay hubisaa in 4" 6" Semi-Insulating SiC Substrate uu bixiyo waxqabad la isku halayn karo oo joogto ah dhammaan codsiyo kala duwan. Haddii aad horumarinayso aaladaha soo noqnoqda sare ama xalalka tamarta waxtarka leh, substrate-yadayada SiC-da-dahaaran ayaa bixiya aasaaska guusha elektiroonigga jiilka soo socda.
Halbeegyada aasaasiga ah
| Cabbirka | 6-inch | 4-inch |
| Dhexroorka | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
| Hanuuninta dusha sare | {0001}±0.2° | |
| Hanuuninta Flat Primary | / | <1120>±5° |
| Hanuuninta Flat Secondary | / | Silikoon weji kor ah:90° CW oo ka yimid Prime flat士5° |
| Dhererka Guriga aasaasiga ah | / | 32.5 mm 士2.0 mm |
| Dhererka Guriga Sare | / | 18.0 mm士2.0 mm |
| Hanuuninta darajada | <1100>±1.0° | / |
| Hanuuninta darajada | 1.0mm+0.25 mm/-0.00 mm | / |
| Xagalka Darajada | 90°+5°/-1° | / |
| Dhumucda | 500.0um士25.0um | |
| Nooca Anshaxa | Semi-insulating | |
Macluumaadka tayada Crystal
| ltem | 6-inch | 4-inch |
| iska caabin | ≥1E9Q·cm | |
| Noocyo badan | Midna lama ogola | |
| Cufnaanta Dheef-yar | ≤0.5/cm2 | ≤0.3/cm2 |
| Hex Plates oo leh iftiin xoogan oo sarreeya | Midna lama ogola | |
| Kaarboon Muuqaal ah oo lagu daro mid sare | Aagga isugeynta≤0.05% | |
Iska caabin -Waxaa lagu tijaabiyay caabbinta xaashida aan xidhiidhka ahayn.
Cufnaanta Dheef-yar
