4 ″ 6 ″ Substrate-ka-dahaaran ee SiC

Sharaxaad Gaaban:

Qaybaha SiC-da-daahiyaha ah waa walxo semiconductor leh iska caabin sare, leh iska caabin ka sarreeya 100,000Ω · cm. Qaybaha SiC-da-daahiyaha leh ayaa inta badan loo isticmaalaa in lagu soo saaro aaladaha microwave RF sida gallium nitride microwave RF aaladaha iyo transistor-ka dhaqdhaqaaqa sare ee elektiroonigga ah (HEMTs). Qalabkan waxaa inta badan loo adeegsadaa isgaarsiinta 5G, isgaarsiinta satellite-ka, radar-ka iyo meelo kale.

 

 


Faahfaahinta Alaabta

Tags Product

Semicera's 4" 6" Semi-Insulating SiC Substrate waa shay tayo sare leh oo loogu talagalay in lagu buuxiyo shuruudaha adag ee codsiyada RF iyo qalabka korontada. Substrate-ku wuxuu isku daraa kuleyliyaha kuleylka ugu fiican iyo koronto-jabka sare ee silikoon carbide oo leh sifooyin-ku-salaysan, taasoo ka dhigaysa doorasho ku habboon horumarinta aaladaha semiconductor sare.

4" 6" Semi-Insulating SiC Substrate si taxadar leh ayaa loo soo saaray si loo hubiyo walaxda nadiifka ah ee sare iyo waxqabadka dahaadhka badheed joogta ah. Tani waxay hubinaysaa in substrate-ku uu bixiyo go'doominta lagama maarmaanka ah ee qalabka RF sida amplifiers iyo transistor-yada, iyadoo sidoo kale la siinayo waxtarka kulaylka ee looga baahan yahay codsiyada awoodda sare leh. Natiijadu waa substrate-ka duwan oo loo isticmaali karo tiro balaadhan oo ah alaabada elektarooniga ah ee waxqabadka sare leh.

Semicera waxa ay aqoonsan tahay muhiimada ay leedahay bixinta substrate-ka la isku halayn karo, cilad la'aanta ah ee codsiyada semiconductor ee muhiimka ah. Substrate-kayaga 4" 6" Semi-Insulating SiC Substrate waxaa la soo saaray iyadoo la adeegsanayo farsamooyinka wax soo saarka ee horumarsan ee yareynaya cilladaha crystal iyo hagaajinta isku midka ah walxaha. Tani waxay awood u siinaysaa badeecada inay taageerto soo saarista aaladaha leh waxqabad la xoojiyey, xasillooni, iyo cimrigeeda.

Ballanqaadka Semicera ee tayada waxay hubisaa in 4" 6" Semi-Insulating SiC Substrate uu bixiyo waxqabad la isku halayn karo oo joogto ah dhammaan codsiyo kala duwan. Haddii aad horumarinayso aaladaha soo noqnoqda sare ama xalalka tamarta waxtarka leh, substrate-yadayada SiC-da-dahaaran ayaa bixiya aasaaska guusha elektiroonigga jiilka soo socda.

Halbeegyada aasaasiga ah

Cabbirka

6-inch 4-inch
Dhexroorka 150.0mm+0mm/-0.2mm 100.0mm+0mm/-0.5mm
Hanuuninta dusha sare {0001}±0.2°
Hanuuninta Flat Primary / <1120>±5°
Hanuuninta Flat Secondary / Silikoon weji kor ah:90° CW oo ka yimid Prime flat士5°
Dhererka Guriga aasaasiga ah / 32.5 mm 士2.0 mm
Dhererka Guriga Sare / 18.0 mm士2.0 mm
Hanuuninta darajada <1100>±1.0° /
Hanuuninta darajada 1.0mm+0.25 mm/-0.00 mm /
Xagalka Darajada 90°+5°/-1° /
Dhumucda 500.0um士25.0um
Nooca Anshaxa Semi-insulating

Macluumaadka tayada Crystal

ltem 6-inch 4-inch
iska caabin ≥1E9Q·cm
Noocyo badan Midna lama ogola
Cufnaanta Dheef-yar ≤0.5/cm2 ≤0.3/cm2
Hex Plates oo leh iftiin xoogan oo sarreeya Midna lama ogola
Kaarboon Muuqaal ah oo lagu daro mid sare Aagga isugeynta≤0.05%
4 6 Substrate-2

Iska caabin -Waxaa lagu tijaabiyay caabbinta xaashida aan xiriirka ahayn.

4 6 Substrate-3

Cufnaanta Dheef-yar

4 6 Substrate-ka-dahaaran ee-4
SiC wafers

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