Semicera's 4", 6", iyo 8" N-nooca SiC Ingots waxay ka dhigan tahay horumar laga gaaray agabka semiconductor, loogu talagalay in lagu daboolo baahida sii kordheysa ee nidaamyada korantada casriga ah iyo kuwa korantada. waxqabad iyo cimri dherer.
N-noocayada SiC-ga waxaa la soo saaray iyadoo la adeegsanayo habab wax soo saar horumarsan oo kor u qaadaya dhaqdhaqaaqa korantada iyo xasiloonida kulaylka. Tani waxay ka dhigaysaa inay ku habboon yihiin codsiyada tamarta sare iyo kuwa sarreeya, sida inverters, transistor-yada, iyo qalabka kale ee elektiroonigga ah halkaasoo waxtarka iyo isku hallaynta ay muhiim tahay.
Dawaynta saxda ah ee maaddooyinkan waxay hubisaa inay bixiyaan waxqabad joogto ah oo la soo celin karo. Joogteyntani waxay muhiim u tahay horumariyeyaasha iyo soosaarayaasha kuwaas oo riixaya xuduudaha tignoolajiyada ee dhinacyada sida hawada sare, baabuurta, iyo isgaarsiinta. Semicera's SiC ingots waxay awood u siineysaa soo saarista aaladaha si hufan ugu shaqeeya xaaladaha daran.
Doorashada Semicera's N-nooca SiC Ingots macnaheedu waa isku-dhafka walxaha si fudud u xamili kara heerkulka sare iyo culeyska sare ee korantada. Ingots-yadani waxay si gaar ah ugu habboon yihiin abuuritaanka qaybo u baahan maaraynta kulaylka heersare ah iyo hawlgal-soo noqnoqonaya, sida cod-weyneyayaasha RF iyo qaybaha korantada.
Adigoo dooranaya Semicera's 4", 6", iyo 8 "N-nooca SiC Ingots, waxaad maalgashanaysaa badeecad isku dhafan siyaalo aan caadi ahayn oo sax ah iyo isku halaynta ay dalbadaan tignoolajiyada semiconductor-ka. bixinta xalal cusub oo dhaqaajiya horumarinta qalabka elektiroonigga ah.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
