Semicera 3C-SiC Wafer Substrates waxaa loo habeeyay si ay u bixiyaan madal adag oo loogu talagalay korantada soo socota ee qalabka elektiroonigga ah iyo aaladaha soo noqnoqda. Iyada oo leh guryaha kuleylka sare iyo sifooyinka korantada, substrate-yadan waxaa loogu talagalay inay buuxiyaan shuruudaha baahida tignoolajiyada casriga ah.
Qaab dhismeedka 3C-SiC (Cubic Silicon Carbide) ee Semicera Wafer Substrates wuxuu bixiyaa faa'iidooyin gaar ah, oo ay ku jiraan kuleyliyaha sare ee kuleylka iyo kororka fidinta kulaylka hoose marka loo eego agabka kale ee semiconductor. Tani waxay ka dhigaysaa door aad u wanaagsan aaladaha ku shaqeeya heerkul aad u daran iyo xaalado awood sare leh.
Iyada oo koronto jabaysa koronto sare iyo xasilooni kiimikaad sare leh, Semicera 3C-SiC Wafer Substrates waxay hubisaa waxqabadka muddada dheer iyo kalsoonida. Guryahaani waxay muhiim u yihiin codsiyada sida radar-soo noqnoqoshada sare, nalka adag ee gobolka, iyo rogayaasha korantada, halkaasoo waxtarka iyo adkeysiga ay muhiim u yihiin.
Ka go'naanta Semicera ee tayada waxay ka muuqataa habka wax-soo-saarka ee 3C-SiC Wafer Substrates, hubinta isku-duubnida iyo joogtaynta qayb kasta. Saxnimadani waxay gacan ka geysataa guud ahaan waxqabadka iyo cimri dhererka aaladaha elegtarooniga ah ee lagu dhisay.
Adiga oo dooranaya Semicera 3C-SiC Wafer Substrates, soosaarayaashu waxay helayaan walax jeexan oo awood u siinaysa horumarinta qaybo elektiroonig ah oo yaryar, dhakhso badan, oo hufan. Semicera waxay sii wadaa inay taageerto hal-abuurnimada tignoolajiyada iyadoo bixisa xalal la isku halayn karo oo buuxinaya baahiyaha soo koraya ee warshadaha semiconductor.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
