Semiceraayaa ku hanweyn inay soo bandhigto30mm Aluminium Nitride Wafer Substrate, Qalab heer sare ah oo loo habeeyey si loo daboolo baahida adag ee codsiyada elektarooniga ah iyo qalabka indhaha ee casriga ah. Aluminium Nitride (AlN) substrates waxay caan ku yihiin kuleylkooda heer sare ah iyo guryaha dahaarka korantada, iyaga oo ka dhigaya doorasho ku habboon aaladaha waxqabadka sare leh.
Astaamaha Muhiimka ah:
• Dhaqdhaqaaqa kulaylka ee aan caadiga ahayn: The30mm Aluminium Nitride Wafer SubstrateWaxay ku faantaa kuleyl kuleyl ah ilaa 170 W/mK, si aad ah uga sarreeya maaddooyinka kale ee substrate-ka ah, hubinta kala daadinta kulaylka hufan ee codsiyada awoodda sare leh.
•Dahaarka Sare ee Korontada: Iyada oo leh sifooyin koronto oo heer sare ah, substrate-kani wuxuu yareynayaa isdhaafsiga hadalka iyo faragelinta calaamadaha, taasoo ka dhigaysa mid ku habboon codsiyada RF iyo microwave.
•Xoogga Makaanikada: The30mm Aluminium Nitride Wafer Substratewaxay bixisaa awood farsamo oo heer sare ah iyo xasilooni, hubinta adkeysiga iyo isku halaynta xitaa marka lagu jiro xaalado adag oo hawlgal ah.
•Codsiyada kala duwanSubstrate-kani wuxuu ku fiican yahay in loo isticmaalo LED-yada awoodda sare leh, diodes laser, iyo qaybaha RF, oo siinaya aasaas adag oo la isku halayn karo mashaariicdaada ugu baahida badan.
•Qalabaynta Saxda ahSemicera waxay hubisaa in substrate-ka wafer kasta lagu sameeyay saxsanaanta ugu sareysa, iyadoo bixisa dhumuc isku mid ah iyo tayada dusha sare si loo buuxiyo heerarka saxda ah ee aaladaha elektiroonigga ah ee horumarsan.
Kordhi waxtarka iyo isku halaynta aaladahaaga Semicera's30mm Aluminium Nitride Wafer Substrate. Substrate-yadayada waxa loo qaabeeyey in ay keenaan waxqabad heersare ah, iyada oo la hubinayo in hababka elektaroonigga ah iyo kuwa indhaha elektiroonigga ah ay u shaqeeyaan sida ugu wanaagsan. Ku kalsoonow Semicera agabka goynta u horseeda warshadaha tayada iyo hal-abuurka.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
