Semicerawuu ku faraxsan yahay inuu bixiyo2" Gallium Oxide Substrates, Qalab goynta ah oo loogu talagalay in lagu wanaajiyo waxqabadka qalabka semiconductor ee horumarsan. Substrate-yadan, oo laga sameeyay Gallium Oxide (Ga2O3), waxay muujisaa xadhig aad u ballaadhan, taas oo ka dhigaysa doorasho ku habboon codsiyada awoodda sare, soo noqnoqoshada sare, iyo UV optoelectronic.
Astaamaha Muhiimka ah:
• Bandgap aadka u ballaadhan: The2" Gallium Oxide Substrateswaxay bixiyaan gaab heersare ah oo qiyaastii ah 4.8 eV, taas oo u oggolaanaysa koronto sare iyo hawlgal heerkul ah, oo aad uga badan awoodaha agabka semiconductor-ka caadiga ah sida silicon.
•Korantada Burburka Gaarka ahSubstrates-yadani waxay awood u siinayaan aaladaha inay xamili karaan koronto aad u sarreeya, taasoo ka dhigaysa inay ku fiican yihiin qalabka korantada, gaar ahaan codsiyada korantada sare.
•Habdhaqan kuleyl heer sare ah: Iyada oo xasilloonida kulaylka sare, substrate-yadani waxay ilaalinayaan waxqabadka joogtada ah xitaa jawi kuleyl ah, oo ku habboon codsiyada heerkulka sare iyo heerkulka sare.
•Qalab tayo sare leh: The2" Gallium Oxide SubstratesBixi cufnaanta cilladaha hooseeya iyo tayada crystalline sare, hubinta waxqabadka la isku halayn karo oo hufan ee aaladahaaga semiconductor.
•Codsiyada kala duwan: Substrates-yadani waxay ku habboon yihiin codsiyo kala duwan, oo ay ku jiraan transistor-ka korantada, Schottky diodes, iyo UV-C LED qalabyada, oo bixiya aasaas adag oo labadaba awoodda iyo hal-abuurka optoelectronic.
Ku fur awoodda buuxda ee aaladahaaga semiconductor adigoo isticmaalaya Semicera's2" Gallium Oxide Substrates. Substratesyadayada waxaa loo qaabeeyey si ay u daboolaan baahida baahida codsiyada maanta, hubinta waxqabadka sare, isku halaynta, iyo hufnaanta. U dooro Semicera agabka semiconductor-ka ugu casrisan ee dhaqaajiya hal-abuurka.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Qiyaasta Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
