2 ~ 6 inch 4° xagal ka baxsan P-nooca 4H-SiC substrate

Semicera's 2 ~ 6 inch 4° xagal ka baxsan P-nooca 4H-SiC substrates ayaa loo habeeyey si ay u daboolaan baahiyaha sii kordhaya ee awooda wax qabadka sare leh iyo soosaarayaasha qalabka RF. Hanuuninta xagasha 4° ka baxsan waxay hubisaa kobaca epitaxial ee la hagaajiyay, taasoo ka dhigaysa substrate-ka aasaaska ugu fiican ee aaladaha kala duwan ee semiconductor, oo ay ku jiraan MOSFETs, IGBTs, iyo diodes.

Tani 2 ~ 6 inch 4 ° xagal ka baxsan P-nooca 4H-SiC substrate wuxuu leeyahay sifooyin walxo aad u wanaagsan, oo ay ku jiraan kuleylka kuleylka sare, waxqabadka korantada ee aad u fiican, iyo xasilloonida farsamada ee cajiibka ah. Hanuuninta xagasha ka baxsan waxay caawisaa yaraynta cufnaanta micropipe waxayna kor u qaadaa lakabyada epitaxial ee siman, taas oo muhiim u ah hagaajinta waxqabadka iyo isku halaynta qalabka semiconductor ee ugu dambeeya.

Semicera's 2 ~ 6 inch 4° xagal ka baxsan P-nooca 4H-SiC substrates ayaa lagu heli karaa dhexrooryo kala duwan, oo u dhexeeya 2 inji ilaa 6 inji, si loo buuxiyo shuruudaha wax soo saarka ee kala duwan. Substrate-yadayada si sax ah ayaa loo farsameeyay si ay u bixiyaan heerar doping isku mid ah iyo sifooyin dusha sare oo tayo sare leh, iyadoo la hubinayo in maraqa kasta uu buuxiyo qeexitaannada adag ee looga baahan yahay codsiyada sare ee elektiroonigga ah.

Ballanqaadka Semicera ee hal-abuurka iyo tayada waxay hubisaa in 2 ~ 6 inch 4° xagal ka baxsan P-nooca 4H-SiC substrates ay bixiyaan waxqabad joogto ah oo codsiyo badan oo kala duwan laga bilaabo korantada korontada ilaa aaladaha soo noqnoqda. Alaabtani waxay siisaa xal lagu kalsoonaan karo oo loogu talagalay jiilka soo socda ee tamarta waxtarka leh, semiconductors-waxqabad sare leh, taageeraya horumarka tignoolajiyada ee warshadaha sida baabuurta, isgaarsiinta, iyo tamarta la cusboonaysiin karo.