Sharaxaada
Shirkaddayadu waxay bixisaaDahaarka SiCadeegyada habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo Silicon ay ka falceliyaan heerkulka sare si ay u helaan daahirsanaan sare SiC molecules, molecules lagu shubo dusha alaabta dahaarka ah, samaynta.lakabka ilaalinta ee SiC.
Tilmaamaha ugu muhiimsan
1. Iska caabbinta oksaydhka heerkulka sare:
caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku uu gaadho 1600 C.
2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalada koloriinaynta heerkulka sare.
3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.
4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.
Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC
| Guryaha SiC-CVD | ||
| Dhismaha Crystal | FCC β wejiga | |
| Cufnaanta | g/cm³ | 3.21 |
| Adag | Vickers adag | 2500 |
| Cabirka Hadhuudhka | μm | 2 ~ 10 |
| Nadiifnimada Kiimikada | % | 99.99995 |
| Awoodda kulaylka | J·k-1 ·K-1 | 640 |
| Heerkulka Sublimation | ℃ | 2700 |
| Xoogga Felexural | MPa (RT 4-dhibcood) | 415 |
| Dhallinta Modul | Gpa (4pt laab, 1300 ℃) | 430 |
| Balaadhinta kulaylka (CTE) | 10-6K-1 | 4.5 |
| Dhaqdhaqaaqa kulaylka | (W/mK) | 300 |
Qalabka
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Susceptor Graphite oo wata Silicon Carbide Coatin...
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Walax heerkulbeeg ah oo loogu talagalay oohinta carbide silicon
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EPI 3 1/4 ″ Reactor Foosto
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SiC pin saxaarad loogu talagalay hababka xoqidda ICP ee gudaha ...
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Susceptor SiC Dahaarka leh ee Deep UV-LED
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SiC-Coated Semiconductor Epitaxial Reactor ee ...