Semicera's10x10mm M-diyaarad Aluminium Substrate ah oo aan polar ahaynwaxaa si taxadar leh loogu talagalay in lagu buuxiyo shuruudaha saxda ah ee codsiyada horumarsan ee optoelectronic. Substrate-kani waxa uu leeyahay hanuuninta diyaarada M-nonpolar, taas oo muhiim u ah yaraynta saamaynta polarization ee aaladaha ay ka midka yihiin LEDs iyo diodes-ka leysarka, taas oo u horseedaysa waxqabadka iyo hufnaanta.
The10x10mm M-diyaarad Aluminium Substrate ah oo aan polar ahaynwaxaa lagu farsameeyay tayada crystalline gaar ah, hubinta cufnaanta cilladaha ugu yar iyo sharafta qaabdhismeedka sare. Tani waxay ka dhigaysaa doorasho ku habboon koritaanka epitaxial ee filimada tayada sare leh ee III-nitride, kuwaas oo lagama maarmaan u ah horumarinta qalabka soo socda ee optoelectronic.
Injineernimada saxda ah ee Semicera ayaa hubisa mid walba10x10mm M-diyaarad Aluminium Substrate ah oo aan polar ahaynwaxay bixisaa dhumuc joogto ah iyo fidsanaan dusha sare ah, kuwaas oo muhiim u ah dhigista filimada isku midka ah iyo samaynta qalabka. Intaa waxaa dheer, cabbirka is haysta ee substrate-ka ayaa ka dhigaya mid ku habboon cilmi-baarista iyo deegaanka wax-soo-saarka labadaba, taas oo u oggolaanaysa adeegsiga dabacsanaan ee codsiyada kala duwan. Iyada oo kuleylkeeda iyo xasilloonida kiimikada ee heer sare ah, substrate-kani wuxuu bixiyaa aasaas la isku halleyn karo oo horumarinta tignoolajiyada casriga ah ee optoelectronic.
| Walxaha | Wax soo saar | Cilmi baaris | nacasnimo |
| Qiyaasta Crystal | |||
| Noocyo badan | 4H | ||
| Khaladka jihaynta dusha sare | <11-20>4±0.15° | ||
| Halbeegyada Korontada | |||
| Dopant | n-nooca Nitrogen | ||
| iska caabin | 0.015-0.025ohm · cm | ||
| Halbeegyada Makaanikada | |||
| Dhexroorka | 150.0 ± 0.2mm | ||
| Dhumucda | 350± 25 μm | ||
| Hanuuninta fidsan ee aasaasiga ah | [1-100]±5° | ||
| Dhererka siman ee aasaasiga ah | 47.5 ± 1.5mm | ||
| Dabaqa labaad | Midna | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Qaansada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Wajiga hore (Si-wejiga) qallafsanaanta (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Qaab dhismeedka | |||
| Cufnaanta tuubbada yar | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Wasakhda birta | ≤5E10atom/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Tayada hore | |||
| Hore | Si | ||
| Dhammaadka dusha sare | Si-wejiga CMP | ||
| Qaybaha | ≤60ea/wafer (xajmiga≥0.3μm) | NA | |
| xoqid | ≤5ea/mm Dhererka isugeynta ≤ Dhexroorka | Dhererka isugeynta≤2* Dhexroor | NA |
| Diirka liimiga ah/gomayska/ wasakhowga/ dildilaaca/ wasakhowga | Midna | NA | |
| Chips-ka-geeska/indents/jabka/taargada hex | Midna | ||
| Aagagga nooca badan | Midna | Aagga isugeynta≤20% | Aagga isugeynta≤30% |
| Calaamadaynta laysarka hore | Midna | ||
| Tayada dambe | |||
| Dhammaadka dhabarka | C-waji CMP | ||
| xoqid | ≤5ea/mm, Dhererka isugeynta≤2* Dhexroor | NA | |
| Cilladaha dhabarka (dhab-jeexyada geesaha) | Midna | ||
| Dhabar xumada | Ra≤0.2nm (5μm*5μm) | ||
| Calaamadaynta laser-ka dambe | 1 mm (laga bilaabo cidhifka sare) | ||
| Cidhif | |||
| Cidhif | Chamfer | ||
| Baakadaha | |||
| Baakadaha | Epi-diyaar ah oo leh baakad vacuum ah Baakadaha cajaladaha wafer-ka badan | ||
| * Xusuusin: "NA" macnaheedu waa codsi la'aan Waxyaabaha aan la sheegin waxay tixraaci karaan SEMI-STD. | |||
